Semiconductor device manufacturing method

A semiconductor device manufacturing method comprising:

• polishing a film on a semiconductor substrate by pressing the film against a polishing pad which rotates in a predetermined direction,
• wherein polishing the film to be processed comprises
• adjusting an entrance temperature of the polishing pad to be equal to or lower than 30° C., and adjusting an exit temperature of the polishing pad to be higher by 5° C. or more than the entrance temperature, the entrance temperature being a temperature of a surface of the polishing pad on an upstream side in the rotational direction of the polishing pad from the film pressed on the polishing pad, and the exit temperature being a temperature of a surface of the polishing pad on a downstream side in the rotational direction of the polishing pad from the film pressed on the polishing pad.

A semiconductor device manufacturing method comprising:

• polishing a film on a semiconductor substrate by pressing the film against a polishing pad which rotates in a predetermined direction,
• wherein polishing the film to be processed comprises
• adjusting an entrance temperature of the polishing pad to be equal to or higher than 40° C. and be equal to or lower than 50° C., and adjusting an exit temperature of the polishing pad to be higher by 5° C. or more than the entrance temperature, the entrance temperature being a temperature of a surface of the polishing pad on an upstream side in the rotational direction of the polishing pad from the film pressed on the polishing pad, and the exit temperature being a temperature of a surface of the polishing pad on a downstream side in the rotational direction of the polishing pad from the film pressed from the film pressed on the polishing pad.