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US 8,575,021 B2Granted
Substrate processing including a masking layer
AssigneeIntermolecular, Inc.
InventorsThomas R. Boussie, Tony P. Chiang, Anh Duong, Zachary Fresco, Nitin Kumar, Chi-I Lang, Sandra G. Malhotra, Jinhong Tong
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Abstract
Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
Claims16
A method of forming a molecular masking layer on a dielectric, comprising:
- forming a first moiety for bonding to the dielectric;
- forming a second moiety for compatibility with a chemical process;
- and
- forming a masking layer on the dielectric by selectively depositing a composition including the first moiety and the second moiety on a region of the dielectric,
- wherein the masking layer conditions the dielectric layer for compatibility with a subsequent chemical process;
- wherein the first moiety comprises at least one of Si—(NR2)n molecules or Si—Cln molecules;
- wherein variable n represents any integer having a value approximately in a range of one (1) to three (3);
- wherein variable R represents molecules of one or more aliphatic groups;
- and
- wherein the variable R represents one or more of methyl groups, ethyl groups, methyl-ethyl (isopropyl) groups, butyl groups, and combinations of one or more of the methyl groups, the ethyl groups, the methyl-ethyl (isopropyl) groups, and the butyl groups.
7 more elements
A method comprising:
- configuring a first moiety for compatibility with one or more of a first set of processes and a substrate;
- configuring a second moiety for compatibility with the first moiety and a second set of processes;
- and
- normalizing the substrate relative to subsequent processing by forming a masking layer on the substrate,
- wherein forming the material layer includes selectively depositing the first moiety and the second moiety on at least one region of a substrate;
- wherein the first moiety comprises at least one of Si—(NR2)n molecules or Si—Cln, molecules;
- wherein variable n represents any integer having a value approximately in a range of one (1) to three (3);
- wherein variable R represents molecules of one or more aliphatic groups;
- and
- wherein the variable R represents one or more of methyl groups, ethyl groups, methyl-ethyl (isopropyl) groups, butyl groups, and combinations of one or more of the methyl groups, the ethyl groups, the methyl-ethyl (isopropyl) groups, and the butyl groups.
7 more elements
Dependencies are inferred from the claim text.