Semiconductor device and method of forming bump structure with multi-layer UBM around bump formation area

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming a first insulating layer over the substrate;
• forming a second conductive layer over the first conductive layer and first insulating layer;
• forming a multi-layer metallization pattern around an interconnect formation area over the second conductive layer, the second conductive layer being exposed in the interconnect formation area;
• forming a second insulating layer over the multi-layer metallization pattern and contacting the second conductive layer within the interconnect formation area;
• and
• forming an interconnect structure over the second conductive layer in the interconnect formation area.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming a multi-layer metallization pattern around an interconnect formation area over the first conductive layer;
• forming a first insulating layer over the multi-layer metallization pattern and over the first conductive layer outside the multi-layer metallization pattern;
• and
• forming an interconnect over the first conductive layer in the interconnect formation area.

A semiconductor device, comprising:

• a semiconductor die;
• a first conductive layer formed over the semiconductor die;
• a first insulating layer formed over the semiconductor die;
• a second conductive layer formed over the first conductive layer and first insulating layer;
• a multi-layer metallization pattern formed around an interconnect formation area over the second conductive layer;
• a second insulating layer formed over the multi-layer metallization pattern and over the second conductive layer outside the multi-layer metallization pattern;
• and
• an interconnect structure formed over the second conductive layer in the interconnect formation area.