Semiconductor device fabricated using a metal microstructure control process

A process for manufacturing an integrated circuit semiconductor device, comprising:

• forming transistors over a semiconductor substrate, comprising:
• forming gate electrodes, comprising:
• placing a metallic gate layer over a gate dielectric layer, the metallic gate layer having at least some <111> crystallographic orientation;
• re-orienting the at least some <111> crystallographic orientation of the metallic gate layer to a <110> crystallographic orientation by subjecting the metallic gate layer to a hydrogen anneal;
• and
• placing dielectric layers over the gate electrodes;
• and
• forming interconnects within and over the dielectric layers to interconnect the transistors to form an operative integrated circuit.