Replacement gate fabrication methods
AssigneeGlobalfoundries Inc.
InventorsPeter Baars, Matthias Goldbach
Life of this patent
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Abstract
Semiconductor devices and related fabrication methods are provided. An exemplary fabrication method involves forming a pair of gate structures having a dielectric region disposed between a first gate structure of the pair and a second gate structure of the pair, and forming a voided region in the dielectric region between the first gate structure and the second gate structure. The first and second gate structures each include a first gate electrode material, wherein the method continues by removing the first gate electrode material to provide second and third voided regions corresponding to the gate structures and forming a second gate electrode material in the first voided region, the second voided region, and the third voided region.
Claims18
A method of fabricating a semiconductor device structure, the method comprising:
- forming a pair of gate structures having a dielectric region disposed between a first gate structure of the pair and a second gate structure of the pair, the first and second gate structures including a first gate electrode material;
- forming a first voided region in the dielectric region between the first gate structure and the second gate structure;
- removing the first gate electrode material to provide a second voided region corresponding to the first gate structure and a third voided region corresponding to the second gate structure;
- and
- forming a second gate electrode material in the first voided region, the second voided region, and the third voided region.
A method of fabricating a semiconductor device structure, the method comprising:
- forming a first gate structure comprising a dummy gate material, the first gate structure having a first longitudinal axis aligned in a first direction;
- forming a second gate structure comprising the dummy gate material, the second gate structure having a second longitudinal axis substantially aligned in the first direction;
- forming a dielectric region between the first gate structure and the second gate structure;
- etching the dielectric region to form a first voided region in the dielectric region between the first gate structure and the second gate structure;
- removing the dummy gate material to provide a second voided region corresponding to the first gate structure and a third voided region corresponding to the second gate structure;
- and
- forming a replacement gate material in the first voided region, the second voided region, and the third voided region, wherein the replacement gate material formed in the first, second and third voided regions is contiguous.
Dependencies are inferred from the claim text.