Two-step hydrogen annealing process for creating uniform non-planar semiconductor devices at aggressive pitch

A method of fabricating a semiconductor nanowire comprising:

• forming at least one semiconductor nanowire from at least an uppermost semiconductor layer of a substrate, wherein an end segment of said at least one semiconductor nanowire is attached to a first semiconductor pad region and another end segment of said at least one semiconductor nanowire is attached to a second semiconductor pad region;
• performing a first hydrogen anneal on said at least one semiconductor nanowire with at least a bottommost surface of said at least one semiconductor nanowire in direct contact with an uppermost surface of said substrate;
• removing a portion of said substrate located beneath said at least one semiconductor nanowire to suspend said at least one semiconductor nanowire above a remaining portion of said substrate;
• and
• performing a second hydrogen anneal on said at least one semiconductor nanowire that is suspended above the remaining portion of said insulator layer.