Methods for directly bonding together semiconductor structures, and bonded semiconductor structures formed using such methods
AssigneeSoitec
InventorMariam Sadaka
Life of this patent
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Abstract
Embodiments of the present invention include methods of directly bonding together semiconductor structures. In some embodiments, a cap layer may be provided at an interface between directly bonded metal features of the semiconductor structures. In some embodiments, impurities are provided within the directly bonded metal features of the semiconductor structures. Bonded semiconductor structures are formed using such methods.
Claims42
A method of directly bonding a first semiconductor structure to a second semiconductor structure, comprising:
- forming a cap layer comprising a metal and silicon at a surface of a first metal feature on the first semiconductor structure, a surface of the cap layer defining a first bonding surface of the first metal feature;
- and
- directly bonding a second bonding surface of a second metal feature on the second semiconductor structure to the first bonding surface of the first metal feature on the first semiconductor structure.
A method of directly bonding a first semiconductor structure to a second semiconductor structure, comprising:
- doping a first metal feature on the first semiconductor structure with impurities;
- and
- directly bonding a second metal feature on the second semiconductor structure to the first metal feature on the first semiconductor structure.
A bonded semiconductor structure, comprising:
- a first semiconductor structure comprising a first metal feature;
- and
- a second semiconductor structure comprising a second metal feature, the second metal feature of the second semiconductor structure directly bonded to the first metal feature of the first semiconductor structure;
- and
- impurities at a bonding interface between the first metal feature and the second metal feature.
A bonded semiconductor structure, comprising:
- a first semiconductor structure comprising a first metal feature comprising a first major surface;
- a second semiconductor structure comprising a second metal feature at least partially surrounded by a dielectric material, the second metal feature of the second semiconductor structure having a second major surface directly bonded to a portion of the first major surface of the first metal feature of the first semiconductor structure;
- and
- a cap material disposed directly between a surface of the dielectric material and another portion of the first major surface of the first metal feature of the first semiconductor structure, the cap material not present at a bonded interface between the second major surface of the second metal feature and the portion of the first major surface of the first metal feature, and the cap material having a composition differing from a composition of the first metal feature.
A method of directly bonding a first semiconductor structure to a second semiconductor structure, comprising:
- doping a first metal feature on the first semiconductor structure with impurities;
- forming a metal cap layer at a surface of the first metal feature on the first semiconductor structure, a surface of the metal cap layer defining a first bonding surface of the first metal feature, the first metal feature configured to carry electrical current during use of the first semiconductor structure, the metal cap layer having a composition hindering electromigration of atoms of the first metal feature during use of the first semiconductor structure;
- and
- directly bonding a second bonding surface of a second metal feature on the second semiconductor structure to the first bonding surface of the first metal feature on the first semiconductor structure.
A method of directly bonding a first semiconductor structure to a second semiconductor structure, comprising:
- forming a metal cap layer at a surface of a first metal feature on the first semiconductor structure, a surface of the metal cap layer defining a first bonding surface of the first metal feature, the first metal feature configured to carry electrical current during use of the first semiconductor structure, the metal cap layer having a composition hindering electromigration of atoms of the first metal feature during use of the first semiconductor structure;
- forming another metal cap layer at a surface of a second metal feature on the second semiconductor structure, a surface of the another metal cap layer at the surface of the second metal feature defining a second bonding surface of the second metal feature;
- and
- directly bonding the second bonding surface of the second metal feature on the second semiconductor structure to the first bonding surface of the first metal feature on the first semiconductor structure.
Dependencies are inferred from the claim text.