Method of using a catalytic layer to enhance formation of a capacitor stack
AssigneesIntermolecular, Inc., Elpida Memory, Inc.
InventorsHanhong Chen, Sandra Malhotra, Hiroyuki Ode, Xiangxin Rui
Life of this patent
Estimating the term…
Abstract
A method for fabricating a dynamic random access memory (DRAM) capacitor includes forming a first electrode layer, forming a catalytic layer on the first electrode layer, optionally annealing the catalytic layer, forming a dielectric layer on the catalytic layer, optionally annealing the dielectric layer, forming a second electrode layer on the dielectric layer, and optionally annealing the capacitor stack. Advantageously, the electrode layers are TiN, the catalytic layer is MoO2−x where x is between 0 and 2, and the physical thickness of the catalytic layer is between about 0.5 nm and about 10 nm, and the dielectric layer is ZrO2.
Claims18
A method for forming a capacitor stack, the method comprising:
- forming a first electrode layer on a substrate;
- forming a catalytic layer on the first electrode layer,
- wherein the catalytic layer comprises one or more layers of unoxidized molybdenum interspersed with one or more layers of MoO2;
- forming a dielectric layer on the catalytic layer,
- wherein the dielectric layer comprises ZrO2 and is formed using a zirconium containing precursor,
- wherein the zirconium containing precursor comprises one of CpZr(NMe2)3 and (MeCp)Zr(NMe2)3,
- wherein the catalytic layer increases a sticking coefficient of the zirconium containing precursor to the catalytic layer relative to the first electrode layer;
- and
- forming a second electrode layer on the dielectric layer.
A method for forming a three layer stack, the method comprising:
- forming a first layer on a substrate;
- forming a catalytic layer on the first layer,
- wherein the catalytic layer comprises one or more layers of unoxidized molybdenum interspersed with one or more layers of MoO2;
- and
- forming a dielectric layer on the catalytic layer,
- wherein the dielectric layer comprises ZrO2 and is formed using a zirconium containing precursor,
- wherein the zirconium containing precursor comprises one of CpZr(NMe2)3 and (MeCp)Zr(NMe2)3,
- wherein the catalytic layer performs increases a sticking coefficient of the zirconium containing precursor to the catalytic layer relative to the first layer.
Dependencies are inferred from the claim text.