Methods for depositing high-K dielectrics
AssigneesIntermolecular, Inc., Elpida Memory, Inc.
InventorsXiangxin Rui, Sunil Shanker, Sandra Malhotra, Imran Hashim, Edward Haywood
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Abstract
Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.
Claims17
A method for forming a stack comprising:
- depositing a platinum electrode on a substrate;
- applying an oxygen plasma treatment to the platinum electrode;
- and
- depositing a titanium oxide layer on the platinum electrode using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide;
- and
- annealing the stack using a rapid thermal oxidation (RTO) process of at least approximately 600° C.
A method for forming a capacitor comprising:
- depositing a platinum electrode on a substrate using physical vapor deposition (PVD) with a pedestal temperature of greater than 250° C. and a working gas having an oxygen partial pressure of greater than 10 percent;
- treating the electrode using an oxygen plasma;
- and
- depositing a titanium oxide layer on the electrode, wherein the titanium oxide layer is at least a portion rutile titanium oxide;
- doping the titanium oxide layer with at least one of yttrium and aluminum.
Dependencies are inferred from the claim text.