US 8,574,983 B2 · Method for fabricating a DRAM capacitor having increased thermal and chemical stability

Abstract

A method for fabricating a dynamic random access memory (DRAM) capacitor includes forming a first electrode film. The first electrode film comprises a conductive binary metal compound and a dopant. The dopant may have a uniform or non-uniform concentration within the first electrode film. A high-k dielectric film is formed over the first electrode film. A second electrode film is formed over the dielectric film. The second electrode film comprises a conductive binary metal compound and a dopant. The dopant may have a uniform or non-uniform concentration within the second electrode film. The dopants and their distribution are chosen so that the crystal structure of the surface of the electrode is not degraded if the electrode is to be used as a templating structure for subsequent layer formation. Additionally, the dopants and their distribution are chosen so that the work function of the electrodes is not degraded.

Claims12

Dependent claims

A method for fabricating a capacitor stack, comprising:

forming a first electrode layer on a substrate, the first electrode layer comprising a first electrode material and a dopant;
forming a dielectric layer on the first electrode layer;
forming a second electrode layer on the dielectric layer;
and
wherein the dopant has a non-uniform concentration throughout the first electrode layer, and wherein the concentration of the dopant is lowest at a surface of the first electrode layer that is in contact with the dielectric layer.

2 more elements

Dependencies are inferred from the claim text.

Method for fabricating a DRAM capacitor having increased thermal and chemical stability

Life of this patent

Method for fabricating a DRAM capacitor having increased thermal and chemical stability

Life of this patent

Abstract

Claims12