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US 8,574,981 B2Granted
Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising same
AssigneeGlobalfoundries Inc.
InventorsStefan Flachowsky, Thilo Scheiper, Peter Javorka, Jan Hoentschel
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Abstract
Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises forming layer of silicon germanium on a P-active region of a semiconducting substrate wherein the layer of silicon germanium has a first concentration of germanium, and performing an oxidation process on the layer of silicon germanium to increase a concentration of germanium in at least a portion of the layer of silicon germanium to a second concentration that is greater than the first concentration of germanium.
Claims18
A method, comprising:
- forming layer of silicon germanium on a P-active region of a semiconducting substrate, said layer of silicon germanium having a first concentration of germanium;
- performing an oxidation process on an exposed upper surface of said layer of silicon germanium to increase a concentration of germanium in at least a portion of said layer of silicon germanium to a second concentration that is greater than said first concentration;
- and
- forming a gate structure of a PFET transistor above said layer of silicon germanium, said gate structure comprising a gate insulation layer, wherein said at least said portion of said layer of silicon germanium having said second concentration of germanium is positioned at an interface between said gate insulation layer and a channel region of the PFET transistor.
1 more element
A method, comprising:
- forming a layer of silicon germanium on a P-active region of a semiconducting substrate, said layer of silicon germanium having a first concentration of germanium;
- performing an oxidation process on an exposed upper surface of said layer of silicon germanium to form a layer of silicon dioxide on said layer of silicon germanium to increase a concentration of germanium in at least a portion of said layer of silicon germanium to a second concentration that is greater than said first concentration;
- removing said layer of silicon dioxide;
- and
- forming a gate structure of a PFET transistor above said layer of silicon germanium, said gate structure comprising a gate insulation layer, wherein said at least said portion of said layer of silicon germanium having said second concentration of germanium is positioned at an interface between said gate insulation layer and a channel region of the PFET transistor.
2 more elements
Dependencies are inferred from the claim text.