Method for forming semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsChing-Wen Hung, Chih-Sen Huang, Ling-Chun Chou, I-Chang Wang
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Abstract
A method for forming a semiconductor device includes firstly providing a gate structure disposed on a substrate and a first nitride material layer disposed on the gate structure, secondly performing a protective step to modify the first nitride material layer in the presence of oxygen, then forming a second nitride material layer on the substrate, and later performing a removal step to remove the second nitride material layer without substantially slashing the modified first nitride material layer.
Claims19
A method for forming a semiconductor device, comprising:
- providing a substrate with a gate structure disposed thereon and a spacer surrounding said gate structure, wherein a surface of said spacer consists of silicon nitride;
- forming a photoresist covering said substrate;
- performing an implantation step to form a lightly doped drain in said substrate on at least one side of said gate structure in the protection of said photoresist;
- performing a stripping step to remove said photoresist in the absence of oxygen;
- performing a protective step to modify said spacer by oxidizing said surface of said spacer for forming an oxide on said surface of said spacer in the presence of oxygen to obtain a modified spacer after said stripping step;
- forming a material layer consisting of silicon nitride disposed on said modified spacer after said protective step;
- and
- performing a removal step after said protective step to remove said material layer without substantially damaging said modified spacer.
A method for forming a semiconductor device, comprising:
- providing a substrate without a photoresist and with a defined gate structure disposed thereon and with a first material layer disposed on said gate structure, wherein said first material layer comprises a nitride;
- performing a protective step to modify said first material layer in the presence of oxygen;
- forming a second material layer disposed on said first material layer and on said substrate after said protective step;
- and
- performing a removal step after said protective step to remove said second material layer on said first material layer with a non-oxidative acid without substantially slashing said modified first material layer, wherein said second material layer comprises a nitride.
Dependencies are inferred from the claim text.