Back to results
US 8,574,975 B2Granted
Semiconductor devices having e-fuse structures and methods of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorDeok-Kee Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: an e-fuse gate, a floating pattern between the e-fuse gate and an e-fuse active portion, a blocking dielectric pattern between the floating pattern and the e-fuse gate, and an e-fuse dielectric layer between the floating pattern and the e-fuse active portion. The floating pattern includes a first portion between the e-fuse gate and the e-fuse active portion and a pair of second portions extended upward along both sidewalls of the e-fuse gate from both edges of the first portion.
Claims12
A method for fabricating a semiconductor device, comprising:
- defining an e-fuse active portion by forming a device isolation pattern on a substrate;
- forming a mold layer on the substrate, the mold layer having a first groove crossing the e-fuse active portion;
- sequentially stacking a floating pattern, a blocking dielectric pattern and an e-fuse gate in the first groove;
- and
- forming an e-fuse dielectric layer between the e-fuse active portion and the floating pattern;
- wherein
- the floating pattern includes a first portion on the e-fuse active portion and at least a pair of second portions extending upward along sidewalls of the e-fuse gate from both edges of the first portion.
4 more elements
Dependencies are inferred from the claim text.