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US 8,574,972 B2Granted
Method for fabricating semiconductor device and plasma doping apparatus
AssigneePanasonic Corporation
InventorsYuichiro Sasaki, Masafumi Kubota, Shigenori Hayashi
Life of this patent
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Abstract
After a fin-semiconductor region (13) is formed on a substrate (11), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (13). This forms impurity-doped region (17) in at least side portions of the fin-semiconductor region (13).
Claims24
A method for fabricating a semiconductor device, comprising the steps of:
- (a) forming a fin-semiconductor region on a substrate;
- and
- (b) performing plasma doping on the fin-semiconductor region by using impurity-containing gas and oxygen-containing gas, thereby forming an impurity-doped region in at least side portions of the fin-semiconductor region,
- wherein, at step (b), after the oxygen-containing gas is used to perform first plasma doping on the fin-semiconductor region, the impurity-containing gas is used to perform second plasma doping on the fin-semiconductor region, thereby forming the impurity-doped region in the side portions of the fin-semiconductor region.
1 more element
A method for fabricating a semiconductor device, comprising the steps of:
- (a) forming a fin-semiconductor region on a substrate;
- and
- (b) performing plasma doping on the fin-semiconductor region by using impurity-containing gas and oxygen-containing gas, thereby forming an impurity-doped region in at least side portions of the fin-semiconductor region,
- wherein, at step (b), after the impurity-doped region is formed in the side portions of the fin-semiconductor region by using the impurity-containing gas to perform first plasma doping on the fin-semiconductor region, the oxygen-containing gas is used to perform second plasma doping on the fin-semiconductor region.
1 more element
Dependencies are inferred from the claim text.