Semiconductor device and method of forming cavity adjacent to sensitive region of semiconductor die using wafer-level underfill material

A method of making a semiconductor device, comprising:

• providing a first semiconductor die including a stress sensitive region;
• providing a second semiconductor die including a plurality of bumps formed over a surface of the second semiconductor die;
• depositing an underfill material over the surface of the second semiconductor die and around the bumps with an opening in the underfill material;
• and
• disposing the first semiconductor die over the second semiconductor die with the opening in the underfill material separating the stress sensitive region and second semiconductor die.

A method of making a semiconductor device, comprising:

• providing a first semiconductor die including a stress sensitive region;
• providing a second semiconductor die including a plurality of bumps formed over a surface of the second semiconductor die;
• forming an underfill material over the first semiconductor die including a cavity formed in the underfill material over the stress sensitive region;
• and
• disposing the first semiconductor die over the second semiconductor die by pressing the bumps into the underfill material with the cavity separating the stress sensitive region and second semiconductor die.

A method of making a semiconductor device, comprising:

• providing a first semiconductor die including a stress sensitive region;
• providing a second semiconductor die including a plurality of bumps formed over a surface of the second semiconductor die;
• forming an underfill material over the second semiconductor die including a cavity formed in the underfill material;
• and
• disposing the first semiconductor die over the second semiconductor die with the stress sensitive region aligned to the cavity to separate the stress sensitive region and second semiconductor die.