Method for manufacturing nonvolatile semiconductor memory element
AssigneePanasonic Corporation
InventorsTakumi Mikawa, Yukio Hayakawa, Takeki Ninomiya, Yoshio Kawashima
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Abstract
An object of the present invention is to provide a method for manufacturing a variable resistance nonvolatile semiconductor memory element which can operate at a low voltage and high speed when initial breakdown is caused, and inhibit oxidization of a contact plug. The method for manufacturing the variable resistance nonvolatile semiconductor memory element, which includes a bottom electrode, a variable resistance layer, and a top electrode which are formed above a contact plug, includes oxidizing to insulate an end portion of the variable resistance layer prior to forming a bottom electrode by patterning a first conductive film.
Claims8
A method for manufacturing a nonvolatile semiconductor memory element, comprising:
- forming a contact plug above a substrate;
- depositing a first conductive film so that the contact plug is covered therewith;
- depositing, on the first conductive film, a variable resistance film including multiple layers having different oxygen content percentages;
- depositing a second conductive film on the variable resistance film;
- forming a top electrode by patterning the second conductive film;
- forming a variable resistance layer by patterning the variable resistance film;
- and
- forming a bottom electrode connected to the contact plug, by patterning the first conductive film,
- said method further comprising oxidizing to insulate an end portion of the variable resistance layer or a portion of the variable resistance film which is to be the end portion of the variable resistance layer, at least prior to forming the bottom electrode.
Dependencies are inferred from the claim text.