Method of forming non-volatile resistive-switching memories
AssigneeIntermolecular, Inc.
InventorsPrashant Phatak, Tony Chiang, Pragati Kumar, Michael Miller
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Abstract
Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (eV), has a set voltage for a set operation of at least one volt per one hundred angstroms of a thickness of the metal oxide, and has a leakage current density less than 40 amps per square centimeter (A/cm2) measured at 0.5 volts (V) per twenty angstroms of the thickness of the metal oxide.
Claims9
A method for forming a resistive-switching memory element comprising:
- forming a first electrode having a first work function;
- forming a first metal oxide over the first electrode, wherein the first metal oxide has a first thickness;
- forming a second metal oxide with a second thickness and located over the first metal oxide, the second metal oxide is different from the first metal oxide, the second thickness is less than 25% of the first thickness;
- forming a second electrode located over the second metal oxide, the second electrode is configured to have a second work function greater than the first work function, wherein the memory element switches from a high resistance state to a low resistance state and vice versa;
- and
- forming a third metal oxide between the first metal oxide and the first electrode,
- wherein the third metal oxide aliovalently dopes into the first metal oxide.
Dependencies are inferred from the claim text.