Method for producing light-emitting film and light-emitting device
AssigneeCanon Kabushiki Kaisha
InventorsTomoyuki Oike, Tatsuya Iwasaki, Yoshihiro Ohashi
Life of this patent
Estimating the term…
Abstract
Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.
Claims10
A method for producing a light-emitting film, comprising depositing a light-emitting film by supplying Cu metal and a zinc sulfide compound onto a substrate in a hydrogen sulfide atmosphere, wherein
- the ratio between the Cu metal supply rate (nm/min) and the zinc sulfide compound supply rate (nm/min) is 1:1,000 or more and 1:10 or less.
Dependencies are inferred from the claim text.