Phase change memory structures and methods

A method of forming memory cells, comprising:

• removing a sacrificial material and a portion of a number of insulator regions to form a contoured opening between the number of insulator regions;
• forming a number of spacers on the number of insulator regions to further define the contoured opening between the number of insulator regions;
• and
• forming a phase change material on the number of spacers and in the contoured opening between the number of insulator regions.

A method of forming a memory array, comprising:

• forming a number of memory structure regions, wherein the memory structure regions include a bottom electrode material and a sacrificial material;
• forming a number of insulator regions between the number of memory structure regions;
• forming a number of openings between the number of insulator regions, forming a contoured surface on the number of insulator regions, and exposing the bottom electrode material by removing the sacrificial material and a portion of the number of insulator regions;
• forming a number of dielectric spacers on the number of insulator regions to create a contoured opening between the number of insulator regions;
• forming a conductive material on the number of dielectric spacers and in the contoured opening between the number of insulator regions;
• forming a phase change material over the conductive material and a top electrode material over the phase change material;
• removing a portion of the phase change material and the top electrode material to form an opening that exposes a portion of the number of insulator regions;
• and
• forming a dielectric material in the opening that exposed the portion of the number of insulator regions.