Method for manufacturing solid-state imaging device

A method for manufacturing a solid-state imaging device in which a charge generator that detects an incident light and generates signal charges, a negative-charge accumulated layer that has negative fixed charges being formed above a detection plane of the charge generator, the method comprising the steps of:

• forming an oxygen layer on the detection plane;
• forming a non-oxygen-layer that contains no oxygen on a semiconductor substrate;
• forming a metal layer that covers the oxygen layer on the detection plane and the non-oxygen layer;
• wherein the forming of the oxygen layer and the forming of the non-oxygen layer include the sub-steps of:
• forming the oxygen layer and the non-oxygen layer in that order from a semiconductor substrate side in such a manner as to cover the detection plane;
• forming a sidewall for a gate electrode of a transistor by using one part of the oxygen layer and the non-oxygen layer while removing the other part of the oxygen layer and the non-oxygen layer;
• forming the non-oxygen layer such that it covers the detection plane;
• and
• removing the non-oxygen layer above the detection plane.