Using isolated epitaxial structures in glue bonding for multiple group-III nitride LEDS on a single substrate

A method for forming a plurality of semiconductor light emitting devices, comprising:

• forming an epitaxial layer comprising a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate;
• separating the epitaxial layer into a plurality of epitaxial structures on the first temporary substrate;
• coupling a second temporary substrate to upper surfaces of the plurality of epitaxial structures with a first adhesive layer;
• removing the first temporary substrate from the plurality of epitaxial structures to expose bottom surfaces of the plurality of epitaxial structures;
• coupling a permanent semiconductor substrate to the bottom surfaces of the plurality of epitaxial structures with a second adhesive layer, wherein the second adhesive layer at least partially intermixes with the first adhesive layer proximate a gap between at least two of the epitaxial structures;
• removing the second temporary substrate and the first adhesive layer from the upper surfaces of the plurality of epitaxial structures, wherein removal of the first adhesive layer at least partially intermixed with the second adhesive layer leaves at least one void in the second adhesive layer proximate the gap between the at least two epitaxial structures;
• and
• separating the permanent semiconductor substrate into a plurality of portions with each portion corresponding to at least one of the plurality of epitaxial structures to form the plurality of semiconductor light emitting devices.