Manufacturing method of solid state light emitting element

A manufacturing method of a solid state light emitting element, the method comprising:

• providing a first substrate;
• forming a plurality of protrusion structures separated to each other on the first substrate;
• forming a buffer layer on the protrusion structures, wherein the buffer layer fills the gaps between the protrusion structures;
• forming an epitaxial growth layer on the buffer layer to form a first semiconductor stacking structure, wherein the epitaxial growth layer is constituted by a second type semiconductor epitaxial layer, an active layer and a first type semiconductor epitaxial layer in sequence;
• inverting the first semiconductor stacking structure to a second substrate, so that the first semiconductor epitaxial layer and the second substrate are connected to form a second semiconductor stacking structure;
• processing the second semiconductor stacking structure by a first etchant solution, which etches the buffer layer completely to form a third semiconductor stacking structure;
• processing the third semiconductor stacking structure by a second etchant solution, which permeates through the gaps between the protrusion structures located between the first substrate and the second type semiconductor epitaxial layer to etch the protrusion structures completely;
• and
• removing the first substrate from the third semiconductor stacking structure to form a fourth semiconductor stacking structure constituted by the second substrate and the epitaxial growth layer disposed thereon, wherein before using the first etchant solution for etching the buffer layer, the method further comprises forming a protection layer covering the surfaces of the epitaxial growth layer and the second substrate.

A manufacturing method of a solid state light emitting element, the method comprising:

• providing a first substrate;
• forming a plurality of protrusion structures separated to each other on the first substrate;
• forming a buffer layer on the protrusion structures, wherein the buffer layer fills the gaps between the protrusion structures;
• forming an epitaxial growth layer on the buffer layer to form a first semiconductor stacking structure, wherein the epitaxial growth layer is constituted by a second type semiconductor epitaxial layer, an active layer and a first type semiconductor epitaxial layer in sequence;
• inverting the first semiconductor stacking structure to a second substrate, so that the first semiconductor epitaxial layer and the second substrate are connected to form a second semiconductor stacking structure;
• processing the second semiconductor stacking structure by a first etchant solution, which etches the buffer layer completely to form a third semiconductor stacking structure;
• processing the third semiconductor stacking structure by a second etchant solution, which permeates through the gaps between the protrusion structures located between the first substrate and the second type semiconductor epitaxial layer to etch the protrusion structures completely;
• and
• removing the first substrate from the third semiconductor stacking structure to form a fourth semiconductor stacking structure constituted by the second substrate and the epitaxial growth layer disposed thereon, wherein the protrusion structures are nano-pillar structures formed by metal oxides, and the height of each nano-pillar structure ranges between 10˜10,000 nano-meters.