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US 8,574,929 B1Granted
Method to form a 3D semiconductor device and structure
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Deepak Sekar, Brian Cronquist
Life of this patent
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Abstract
A method to form a monolithic 3D device including: processing a first layer including first mono-crystal transistors; transferring a second mono-crystal layer on top of the first layer including first mono-crystal transistors by using ion-cut layer transfer; and repairing the damage caused by the ion-cut by using optical annealing.
Claims30
A method to form a monolithic 3D device, the method comprising:
- processing a first layer comprising first mono-crystal transistors;
- transferring a second mono-crystal layer on top of said first layer by using an ion-cut layer transfer;
- and
- repairing damage caused by said ion-cut using optical annealing.
1 more element
A method to form a monolithic 3D device, the method comprising:
- processing a first layer comprising first mono-crystal transistors;
- wherein an interconnection layer comprising aluminum or copper is formed overlaying said first layer;
- transferring a second mono-crystal layer on top of said interconnection layer by using an ion-cut layer transfer;
- and
- repairing damage caused by said ion-cut using optical annealing;
- wherein said optical annealing is performed without damaging said interconnection layer;
- and
- wherein second transistors are formed at least partly within said second mono-crystal layer.
5 more elements
A method to form a monolithic 3D device, the method comprising:
- processing a first layer comprising first mono-crystal transistors;
- transferring a second mono-crystal layer on top of said first layer by using an ion-cut layer transfer;
- and
- repairing damage caused by said ion-cut using optical annealing;
- wherein second transistors are formed at least partly within said second mono-crystal layer;
- and
- wherein a shielding layer is formed between said first layer and said second mono-crystal layer.
4 more elements
A method to form a monolithic 3D device, the method comprising:
- processing a first layer comprising first mono-crystal transistors;
- transferring a second mono-crystal layer on top of said first layer by using an ion-cut layer transfer;
- repairing damage caused by said ion-cut using optical annealing;
- wherein second vertically oriented transistors are formed at least partly within said second mono-crystal layer.
1 more element
Dependencies are inferred from the claim text.