Magnetic tunnel junction device and its fabricating method
AssigneeSemiconductor Manufacturing International (Beijing) Corporation
InventorsMin-Hwa Chi, Xiufeng Han, Guoqiang Yu
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Abstract
Using a damascene process, a cup-shaped MTJ device is formed in an opening within a dielectric layer. A passivation layer is formed on the top surfaces of the sidewalls of the cup-shaped MTJ device to enclose the top of the sidewalls, thereby reducing magnetic flux leakage. Accordingly, the MTJ device may be fabricated using the same equipment that are compatible with and commonly used in CMOS technologies/processes.
Claims20
A semiconductor structure comprising:
- a substrate;
- a first dielectric layer formed above the substrate, said first dielectric layer comprising an opening;
- a cup-shaped magnetic tunnel junction (MTJ) device formed in the opening;
- and a dielectric member disposed inside a cup-shaped cavity defined by the MTJ device.
A method for fabricating a semiconductor structure, the method comprising:
- forming a first dielectric layer above a substrate;
- forming an opening in the dielectric layer;
- and
- forming a magnetic tunnel junction (MTJ) device in the opening using a damascene process, the MTJ device being of a cup shape.
A semiconductor structure comprising:
- a substrate;
- a first dielectric layer formed above the substrate, said first dielectric layer comprising an opening;
- a magnetic tunnel junction (MTJ) device formed in the opening;
- and
- a passivation layer overlaying at least a top surface of at least a sidewall of the MTJ device, wherein the passivation layer and the first dielectric layer are formed of a same material.
Dependencies are inferred from the claim text.