Magnetic memory and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsKenji Noma, Hiroshi Watanabe, Shinya Kobayashi
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Abstract
According to one embodiment, a manufacturing method of a magnetic memory includes forming a magnetoresistive element in a cell array section on a semiconductor substrate, forming a dummy element in a peripheral circuit section on the semiconductor substrate, the dummy element having the same stacked structure as the magnetoresistive element and being arranged at the same level as the magnetoresistive element, collectively flattening the magnetoresistive element and the dummy element, applying a laser beam to the dummy element to form the dummy element into a non-magnetic body, and forming an upper electrode on the flattened magnetoresistive element.
Claims14
A manufacturing method of a magnetic memory, the method comprising:
- forming a magnetoresistive element in a cell array section on a semiconductor substrate;
- forming a dummy MTJ element in a peripheral circuit section on the semiconductor substrate, the dummy MTJ element having the same stacked structure as the magnetoresistive element and being arranged at the same level as the magnetoresistive element;
- collectively flattening the magnetoresistive element and the dummy MTJ element;
- applying a laser beam to the dummy MTJ element to form the dummy MTJ element into a non-magnetic body;
- and
- forming an upper electrode on the flattened magnetoresistive element.
A manufacturing method of a magnetic memory, the method comprising:
- forming an magnetoresistive element in a cell array section on a semiconductor substrate;
- forming a dummy MTJ element in a peripheral circuit section on the semiconductor substrate, the dummy MTJ element having the same stacked structure as the magnetoresistive element and being arranged at the same level as the magnetoresistive element;
- collectively flattening the magnetoresistive element and the dummy MTJ element;
- removing the dummy MTJ element;
- and
- forming an upper electrode on the flattened magnetoresistive element.
Dependencies are inferred from the claim text.