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US 8,574,822 B2Granted
Nanoimprint resist
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsZhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen
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Abstract
A nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether, a methylmethacrylate, a diluent solvent, and a photo initiator. The hyperbranched polyurethane oligomer can be polymerized by a copolymerization of trimellitic anhydride, ethylene mercaptan, and epoxy acrylic acid. The hyperbranched polyurethane oligomer can also be polymerized by a ring-opening copolymerization epoxy acrylic acid and ethylene glycol.
Claims6
A nanoimprint resist comprising:
- a hyperbranched polymer oligomer (HP);
- a perfluoropolyether (PFPE);
- a methylmethacrylate (MMA);
- a diluent solvent;
- and
- a photo initiator, wherein a weight percent of the HP is in a range from about 50 wt % to about 60 wt %, a weight percent of the PFPE is in a range from about 3 wt % to about 5 wt %, a weight percent of the MMA is in a range from about 5 wt % to about 10 wt %, a weight percent of the diluents solvent is in a range from about 25 wt % to about 35 wt %, and a weight percent of the photo initiator is in a range from about 0.1% to about 2%.
3 more elements
Dependencies are inferred from the claim text.