Positive resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Koji Hasegawa
Life of this patent
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Abstract
A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1), (2) or (3) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a pattern with good profile, minimal edge roughness, and etch resistance. In formula (1), R1, R2, R5, R6, R8, and R9 are alkyl, aryl, or alkenyl, R3, R4, R7, R10, and R11 are hydrogen, alkyl, alkoxy, acyloxy, halogen, cyano, nitro, hydroxyl or trifluoromethyl, M is methylene or ethylene, R is a single bond or linking group.
Claims11
A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group having the general formula (1), (2) or (3):
- wherein R1, R2, R5, R6, R8, and R9 are each independently a straight, branched or cyclic C1-C8 alkyl, C6-C10 aryl, or C2-C10 alkenyl group, which may contain an oxygen or sulfur atom, R3, R4, R7, R10, and R11 are each independently hydrogen, a straight, branched or cyclic C1-C6 alkyl, alkoxy, acyloxy, halogen, cyano, nitro, hydroxyl, or trifluoromethyl group, M is methylene or ethylene, R is a single bond or a C1-C2 linking group which may contain a double bond, oxygen atom or sulfur atom.
Dependencies are inferred from the claim text.