Method and composition for depositing ruthenium with assistive metal species

A method of forming a ruthenium metal film in a vapor deposition process, comprising depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium nucleation in relation to deposition of ruthenium in the absence of such assistive metal species, wherein the assistive metal species is deposited on a substrate in a layer having a thickness of 0.8 to 8 Å before the deposition of the ruthenium, and wherein the ruthenium metal is deposited on strontium-containing material.

A method of forming a ruthenium metal film in a vapor deposition process, comprising depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium nucleation in relation to deposition of ruthenium in the absence of such assistive metal species, wherein the assistive metal species is deposited on a substrate in a layer having a thickness of 0.8 to 8 Å before the deposition of the ruthenium, and wherein the assistive metal species is deposited from a precursor comprising a dicyclopentadienyl strontium precursor.

A method of forming a ruthenium metal film in a vapor deposition process, comprising depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium nucleation in relation to deposition of ruthenium in the absence of such assistive metal species, wherein the assistive metal species is deposited on a substrate in a layer having a thickness of 0.8 to 8 Å before the deposition of the ruthenium, and wherein ruthenium metal is deposited on a strontium-containing film formed by atomic layer deposition from a vapor of a dicyclopentadienyl strontium precursor.

A method of forming a ruthenium-containing film in a vapor deposition process, comprising depositing ruthenium from a ruthenium precursor with an assistive metal species that increases the rate and extent of ruthenium nucleation in relation to deposition of ruthenium in the absence of such assistive metal species, wherein the assistive metal species is selected from the group consisting of one or more assistive metal species containing strontium, calcium, barium, magnesium, aluminum, zirconium, niobium, vanadium, iron and hafnium, wherein ruthenium is deposited with the assistive metal, from a precursor vapor comprising ruthenium and the assistive metal species, wherein, when the assistive metal species is a strontium amidinate or a barium amidinate, the ruthenium precursor is not a ruthenium amidinate, and wherein when the assistive metal species is dicyclopentadienyl calcium, strontium, or barium, the ruthenium precursor is a dicyclopentadienyl ruthenium precursor.

A method of forming a ruthenium-containing film in a vapor deposition process, comprising depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium nucleation in relation to deposition of ruthenium in the absence of such assistive metal species, wherein ruthenium and the assistive metal species are deposited from a precursor vapor of a precursor composition comprising strontium and ruthenium metal precursors dissolved in a solvent medium and wherein the ruthenium precursor comprises a dicyclopentadienyl ruthenium compound including on at least one of constituent cyclopentadienyl rings thereof a pendant Lewis base functional group that coordinates to the strontium metal center of the strontium precursor.

A method of forming a ruthenium-containing film in a vapor deposition process, comprising depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium nucleation in relation to deposition of ruthenium in the absence of such assistive metal species wherein ruthenium and the assistive metal species are deposited from a precursor vapor of a precursor composition comprising strontium and ruthenium metal precursors dissolved in a solvent medium, and wherein the ruthenium and strontium precursors are both dicyclopentadienyl compounds.

A method of forming a ruthenium-containing film in a vapor deposition process, comprising depositing ruthenium from a ruthenium precursor with an assistive metal species that increases the rate and extent of ruthenium nucleation in relation to deposition of ruthenium in the absence of such assistive metal species, wherein ruthenium is deposited with the assistive metal species, from a precursor vapor comprising ruthenium and the assistive metal species and wherein the assistive metal species is selected from the group consisting of one or more assistive metal species containing calcium, barium, magnesium, aluminum, zirconium, niobium, vanadium, iron and hafnium, wherein, when the assistive metal species is a barium amidinate, the ruthenium precursor is not a ruthenium amidinate, and wherein when the assistive metal species is dicyclopentadienyl calcium or barium, the ruthenium precursor is a dicyclopentadienyl ruthenium precursor.

A method of forming a ruthenium metal film in a vapor deposition process, comprising depositing ruthenium from a ruthenium precursor with an assistive metal species that increases the rate and extent of ruthenium nucleation in relation to deposition of ruthenium in the absence of such assistive metal species, wherein the assistive metal species is deposited on a substrate in a layer having a thickness of 0.8 to 8 Å before the deposition of the ruthenium, and the assistive metal species is selected from the group consisting of one or more assistive metal species comprising oxides, sulfides, and carbonates of strontium, calcium, barium, magnesium, titanium, aluminum, zirconium, tantalum, niobium, vanadium, iron and hafnium, wherein when the assistive metal species comprises an oxide of aluminum, hafnium, zirconium, or titanium, the ruthenium precursor does not comprise alkenyl or cycloalkenyl functionality.