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US 8,574,532 B2Granted
Method for producing semiconductor crystal, apparatus for crystal production and group 13 element nitride semiconductor crystal
AssigneeMitsubishi Chemical Corporation
InventorsHideo Fujisawa, Yutaka Mikawa
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Abstract
A semiconductor crystal is produced through crystal growth in the presence of a solvent in a supercritical and/or subcritical state in a reactor, wherein at least a part of the surface of the reactor and the surface of the member to be used inside the reactor is coated with a platinum group-Group 13 metal alloy coating film.
Claims11
A method for producing a semiconductor crystal, comprising:
- growing a crystal in the presence of a nitrogen-containing solvent and a mineralizer in a reactor;
- and
- coating at least a portion of an inner surface of the reactor and a surface of a member placed inside the reactor with a platinum group-Group 13 metal alloy coating film at a temperature of from 400 to 700° C. and under a pressure of from 80 to 700 MPa,
- wherein the member is placed inside the reactor such that the member is separable from the reactor.
1 more element
Dependencies are inferred from the claim text.