Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
AssigneeUniversity of South Carolina
InventorsTangali S. Sudarshan, Amitesh Srivastava
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Abstract
A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 μs and about 9.9 μs.
Claims15
A method of growing a silicon carbide epitaxial layer on a substrate, the method comprising
- heating the substrate in a temperature increase atmosphere from about 1000° C. to a growth temperature that is between about 1400° C. and about 1650° C., wherein the temperature increase atmosphere comprises a first carbon source gas;
- growing the silicon carbide epitaxial layer on the substrate at the growth temperature in a growth atmosphere, wherein the growth atmosphere comprises a silane source gas;
- and
- after termination of epilayer growth, cooling the substrate in a temperature decrease atmosphere until the temperature reaches about 1000° C. or lower, wherein the temperature decrease atmosphere comprises a second carbon source gas, wherein the temperature decrease atmosphere is substantially free of silane source gas.
Dependencies are inferred from the claim text.