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US 8,574,525 B2Granted
Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals
AssigneeThe Regents of the University of California
InventorsSiddha Pimputkar, Derrick S. Kamber, James S. Speck, Shuji Nakamura
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Abstract
Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid.
Claims5
A method for growing (Al,Ga,In)N crystals, comprising:
- (a) placing (Al,Ga,In)N source materials and (Al,Ga,In)N seed crystals into a vessel;
- (b) filling the vessel with a solvent for dissolving the (Al,Ga,In)N source materials and transporting the dissolved (Al,Ga,In)N nitride source materials to the (Al,Ga,In)N seed crystals for ammonothermal growth of the (Al,Ga,In)N crystals;
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- (c) placing boron-containing material into the vessel's environment for use as impurity getters during the ammonothermal growth of the (Al,Ga,In)N crystals, wherein the boron-containing material includes one or more of borane (BH3), diborane (B2H6), borazane (BNH6), borazine (B3N3H6), sodium borohydride (NaBH4), and boron in its elemental form.
1 more element
Dependencies are inferred from the claim text.