US 8,574,361 B2 · Group-III element nitride crystal producing method and group-III element nitride crystal

Abstract

A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Claims12

Dependent claims

A method for producing a group-III element nitride crystal, comprising the steps of:

placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel;
pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen containing gas;
causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus;
and
adding a hydrocarbon having a boiling point higher than a melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

12/524,811Filed 5 Mar 2008

Priority

JP 2007-06584514 Mar 2007

Published

US 2010/0078606 A11 Apr 2010

Granted

5 Nov 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10F 77/1246
Comprising only Group III-V materials, e.g. GaAs: iII-V nitrides, e.g. GaN
C30B 9/10
Using other solvents: metal solvents
C30B 11/12
Every component of the crystal composition being added during the crystallisation: vaporous components, e.g. vapour-liquid-solid-growth
C30B 19/02
Liquid-phase epitaxial-layer growth: using molten solvents, e.g. flux

Group-III element nitride crystal producing method and group-III element nitride crystal

Life of this patent

Group-III element nitride crystal producing method and group-III element nitride crystal

Life of this patent

Abstract

Claims12