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US 8,574,330 B2Granted
Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method for semiconductor device
AssigneeJsr Corporation
InventorsYuuji Namie, Tomohisa Konno, Masayuki Motonari, Hirotaka Shida, Akihiro Takemura
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Abstract
A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.
Claims14
A chemical mechanical polishing aqueous dispersion comprising:
- (A) a first water-soluble polymer having a weight average molecular weight of from 1,500,000 to 2,000,000, a molecule of the first water-soluble polymer comprising a heterocyclic ring;
- (B) a second water-soluble polymer or a salt of the second water-soluble polymer having a weight average molecular weight of 1000 to 10,000 and comprising one group selected from a carboxyl group and a sulfonic group;
- (C) an oxidizing agent;
- and
- (D) abrasive grains,
- the chemical mechanical polishing aqueous dispersion having a pH of 7 to 12.
3 more elements
Dependencies are inferred from the claim text.