Gas sensors, methods of preparation thereof, methods of selecting gas sensor materials, and methods of use of gas sensors
AssigneeGeorgia Tech Research Corporation
InventorJames L. Gole
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Abstract
Embodiments of the present disclosure provide for methods of selecting a nanostructured deposit for a conductometric gas sensor, methods of detecting a gas based on the acidic or basic characteristic of the gas using a conductometric gas sensor, devices including conductometric gas sensors, arrays of conductometric gas sensors, methods of determining the acidic or basic characteristic of a gas, methods of treating a sensor, and the like.
Claims25
A method of selecting a nanostructured deposit for a conductometric porous silicon gas sensor, comprising:
- exposing a gas to a plurality of testing conductometric porous silicon gas sensors, wherein each of the testing conductometric porous silicon gas sensors is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration,
- wherein the testing conductometric porous silicon gas sensor has a porous silicon layer, wherein one or more of the testing conductometric porous silicon gas sensors has a nanostructured deposit disposed on the porous silicon layer, wherein the nanostructured deposit is selected from the group consisting of:
- a nanostructured deposit having the characteristic of a hard acid, a nanostructured deposit having the characteristic of an intermediate acid, a nanostructured deposit having the characteristic of a soft acid, a nanostructured deposit having the characteristic of a hard base, a nanostructured deposit having the characteristic of an intermediate base, and a nanostructured deposit having the characteristic of a soft base,
- measuring an impedance change using each of the testing conductometric porous silicon gas sensors relative to a standard testing conductometric porous silicon gas sensor, and
- selecting the nanostructured deposit using the concept that the nanostructured deposit and the gas have complementary characteristics based on the interactions of two of the following:
- a hard acid, an intermediate acid, a soft acid, a hard base, an intermediate base, and a soft base, where such interaction between the gas and the nanostructured deposit determines the measured impedance change, wherein the combination of the nanostructured deposit and the gas generates a range of impedance changes, the greatest impedance change being determined by the maximum hard acid/soft base or hard base/soft acid mismatch between the gas and the nanostructured deposit.
A method of detecting a gas based on the acidic or basic characteristic of the gas using a conductometric porous silicon gas sensor, comprising:
- exposing a gas to one or more conductometric porous silicon gas sensors, wherein each of the conductometric porous silicon gas sensors is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration,
- wherein the conductometric porous silicon gas sensor has a porous silicon layer, wherein one or more of the conductometric porous silicon gas sensors has a nanostructured deposit disposed on the porous silicon layer, wherein the nanostructured deposit is selected from the group consisting of:
- a nanostructured deposit having the characteristic of a hard acid, a nanostructured deposit having the characteristic of an intermediate acid, a nanostructured deposit having the characteristic of a soft acid, a nanostructured deposit having the characteristic of a hard base, a nanostructured deposit having the characteristic of an intermediate base, and a nanostructured deposit having the characteristic of a soft base, wherein the nanostructured deposit used is based on the concept that the nanostructured deposit and the gas have complementary characteristics based on the interactions of two of the following:
- a hard acid, an intermediate acid, a soft acid, a hard base, an intermediate base, and a soft base, where such interaction between the gas and the nanostructured deposit determines the measured impedance change, wherein the greatest impedance change is obtained by using a nanostructured deposit and the gas promoting an interaction that generates the maximum acid-base mismatch;
- measuring the impedance change using one or more of the conductometric porous silicon gas sensors relative to a standard conductometric porous silicon gas sensor;
- and
- obtaining the greatest impedance change using the conductometric porous silicon gas sensor that has the nanoparticle deposit that interact with the gas to produce the maximum acid-base mismatch.
A device, comprising:
- a conductometric porous silicon gas sensor including a silicon substrate having a porous silicon layer, wherein a nanostructured deposit is disposed on a portion of the porous silicon layer,
- wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration,
- wherein if the gas of interest has the characteristic of a hard base, the nanostructured deposit does not have the characteristics of a hard acid, wherein if the gas of interest has the characteristic of a soft base, the nanostructured deposit does not have the characteristics of a soft acid, wherein if the gas of interest has the characteristic of an intermediate base, the nanostructured deposit does not have the characteristic of an intermediate acid, wherein if the gas of interest has the characteristic of a hard acid, the nanostructured deposit does not have the characteristics of a hard base, wherein if the gas of interest has the characteristic of a soft acid, the nanostructured deposit does not have the characteristic of a soft base, wherein if the gas of interest has the characteristic of an intermediate acid, the nanostructured deposit does not have the characteristic of an intermediate base.
A method of determining the acidic or basic characteristic of a gas, comprising:
- exposing a gas to a plurality of conductometric porous silicon gas sensors, wherein each of the conductometric porous silicon gas sensors is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration,
- wherein the conductometric porous silicon gas sensor has a porous silicon layer, wherein one or more of the conductometric porous silicon gas sensors has a nanostructured deposit disposed on the porous silicon layer, wherein the nanostructured deposit is selected from the group consisting of:
- a nanostructured deposit having the characteristic of a hard acid, a nanostructured deposit having the characteristic of an intermediate acid, a nanostructured deposit having the characteristic of a soft acid, a nanostructured deposit having the characteristic of a hard base, a nanostructured deposit having the characteristic of an intermediate base, and a nanostructured deposit having the characteristic of a soft base, wherein the nanostructured deposit used is based on the concept that the nanostructured deposit and the gas have complementary characteristics based on the interactions of two of the following:
- a hard acid, an intermediate acid, a soft acid, a hard base, an intermediate base, and a soft base, where such interaction between the gas and the nanostructured deposit determines the measured impedance change,
- measuring an impedance change using each of the conductometric porous silicon gas sensors relative to a standard conductometric porous silicon gas sensor, and
- determining if the gas has the characteristic of a hard acid, an intermediate acid, a soft acid, a hard base, an intermediate base, or a soft base, based on the impedance change of the conductometric porous silicon gas sensors.
Dependencies are inferred from the claim text.