# US 8,572,520 B2 · Optical proximity correction for mask repair

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,572,520 B2
- Document ID: US8572520B2
- Status: Granted
- Kind: B2
- Application number: 13/409,515
- Filed: 2012-03-01
- Published: 2013-09-05
- Granted: 2013-10-29
- Earliest claimed: 2012-03-01
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Chih-Shiang Chou; Ya-Ting Chang; Fu-Sheng Chu; Yu-Po Tang
- Inventors: Chih-Shiang Chou; Ya-Ting Chang; Fu-Sheng Chu; Yu-Po Tang
- Web page: https://patentgrep.com/patent/US8572520B2

## CPC

- G03F 1/70: Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
- G03F 1/36: Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

Integrated circuit (IC) methods for optical proximity correction (OPC) modeling and mask repair are described. The methods include use of an optical model that generates a simulated aerial image from an actual aerial image obtained in an optical microscope system. In the OPC modeling methods, OPC according to stage modeling is simulated, and OPC features may be added to a design layout according to the simulating OPC. In the mask repair methods, inverse image rendering is performed on the actual aerial image and diffraction image by applying an optical model that divides an incoherent exposure source into a plurality of coherent sources.

## Claims

### Claim 1

A method for optical proximity correction (OPC) modeling, comprising:
receiving a photomask with a pattern based on a design layout for an integrated circuit (IC);
acquiring, by an optical microscope system, an aerial image and a diffraction image of the photomask;
forming a photoresist pattern using the photomask;
acquiring, by a scanning electron microscope (SEM), an image of the photoresist pattern;
generating a simulated aerial image from the aerial image and the diffraction image;
detecting defects based on differences between the simulated aerial image and the SEM image; and
simulating optical proximity corrections based on the defects.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
providing OPC features to another design layout according to the simulated OPC.

### Claim 3 (depends on 1)

The method of claim 1, further comprising:
extracting photoresist reaction data according to a difference between the simulated aerial image of the photomask and the SEM image.

### Claim 4 (depends on 1)

The method of claim 1, further comprising building one or more stage models based on data from the aerial image and data from the SEM image.

### Claim 5 (depends on 4)

The method of claim 4, wherein the one or more stage models is based on an optical model that divides an incoherent exposure source into a plurality of coherent sources.

### Claim 6 (depends on 5)

The method of claim 5, wherein the optical model generates a simulated image of a mask pattern.

### Claim 7 (depends on 6)

The method of claim 6, wherein the optical model expresses the simulated image of the mask pattern as a function of light field of illumination of a microscope condenser, polarization decomposition, transfer function of microscope pupil, and light field through mask.

### Claim 8 (depends on 7)

The method of claim 7, wherein the simulated aerial image is a function of light field of scanner illumination, transfer function of scanner pupil, and reflection and transmission computation with polarization decomposition.

### Claim 9

A method for repairing mask defects in a photomask, comprising:
providing a photomask with a mask pattern for an integrated circuit (IC);
receiving an aerial image and a diffraction image of the photomask from an optical microscope system;
performing inverse image rendering on the aerial image by applying an optical model that divides an incoherent exposure source into a plurality of coherent sources, wherein the optical model comprises calculations that generate a simulated aerial image from the aerial image and the diffraction image of the photomask;
determining mask defects by comparing from a design layout of the IC and the simulated aerial image; and
repairing the mask defects on the photomask.

### Claim 10 (depends on 9)

The method of claim 9, wherein the calculations comprise simulation of an image of the mask pattern from the aerial image and the diffraction image of the photomask.

### Claim 11 (depends on 10)

The method of claim 10, wherein the simulated image of the mask pattern is a function of light field of illumination of a microscope condenser, polarization decomposition, transfer function of microscope pupil, and light field through mask.

### Claim 12 (depends on 10)

The method of claim 10, wherein data from the simulated image of the mask pattern generates a simulated aerial image.

### Claim 13 (depends on 12)

The method of claim 12, wherein the simulated aerial image is a function of light field of scanner illumination, transfer function of scanner pupil, and reflection and transmission computation with polarization decomposition.

### Claim 14 (depends on 9)

The method of claim 9, wherein performing inverse image rendering comprises acquiring a light field at pupil plane from the photomask.

### Claim 15 (depends on 9)

The method of claim 9, wherein the optical model is separated from lumped effects.

### Claim 16

A method for repairing mask defects in a photomask, comprising:
receiving a design layout for an integrated circuit;
forming a mask pattern on a photomask;
acquiring, by an optical microscope system, an aerial image of the photomask;
applying an optical model that divides an incoherent exposure source into a plurality of coherent sources, wherein the optical model generates a simulated image of the mask pattern and a simulated aerial image from the aerial image of the photomask, wherein the simulated image of the mask pattern is a function of light field of illumination of a microscope condenser, polarization decomposition, transfer function of microscope pupil, and light field through mask;
extracting mask defects by comparing the design layout and the simulated aerial image; and
repairing the mask defects.

### Claim 17 (depends on 16)

The method of claim 16, wherein the simulated aerial image is a function of light field of scanner illumination, transfer function of scanner pupil, and reflection and transmission computation with polarization decomposition.

### Claim 18 (depends on 16)

The method of claim 16, wherein the optical model is separated from lumped effects.