Predicting pattern critical dimensions in a lithographic exposure process
AssigneeNikon Precision Inc.
InventorsJacek K. Tyminski, Raluca Popescu
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Abstract
A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.
Claims29
A method of predicting pattern critical dimensions in a lithographic exposure process, comprising:
- defining relationships between critical dimension, defocus, and dose;
- performing at least one exposure run in creating a pattern on a wafer;
- creating a dose map;
- creating a defocus map;
- and
- predicting, by a computer device, pattern critical dimensions based on the relationships, the dose map, and the defocus map,
- wherein the dose map is created based on dose integrator data;
- and
- the defocus map is created based on wafer table direct interferometer data, total field deviation data, and focus correction data.
A system for predicting pattern critical dimensions in a lithographic exposure process, comprising:
- a computing device configured to:
- create a dose map and a defocus map based on data from at least one exposure run that creates a pattern on a wafer;
- and
- predict pattern critical dimensions based on the dose map, the defocus map, and predetermined relationships between critical dimension, defocus, and dose,
- wherein the dose map is created based on dose integrator data;
- and
- the defocus map is created based on a vector sum of topography target errors, stage trajectory errors, and image plane excursions.
A computer program product comprising program code stored in a computer readable medium that, when executed on a computing device, causes the computing device to:
- create a dose map and a defocus map based on data from at least one exposure run that creates a pattern on a wafer;
- and
- predict pattern critical dimensions based on the dose map, the defocus map, and predetermined relationships between critical dimension, defocus, and dose,
- wherein the dose map is created based on dose integrator data;
- and
- the defocus map is created based on a vector sum of topography target errors, stage trajectory errors, and image plane excursions.
Dependencies are inferred from the claim text.