# US 8,571,175 B2 · System and method for determining ionization susceptibility using x-rays > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,571,175 B2 - Document ID: US8571175B2 - Status: Granted - Kind: B2 - Application number: 12/627,065 - Filed: 2009-11-30 - Published: 2011-06-02 - Granted: 2013-10-29 - Earliest claimed: 2009-11-30 - Assignees: The Boeing Company - Applicants: Mark Joseph Clemen, Jr.; Clarence Lavere Gordon, III; Jerry Lee Wert - Inventors: Mark Joseph Clemen, Jr.; Clarence Lavere Gordon, III; Jerry Lee Wert - Web page: https://patentgrep.com/patent/US8571175B2 ## CPC - G21K 1/06: using diffraction, refraction or reflection, e.g. monochromators (G21K1/10, G21K7/00 take precedence) - G01N 23/221: by activation analysis - G21K: HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract A system for determining ionization susceptibility including a sample, an x-ray generator configured to generate a pulsed x-ray beam, and focusing optics disposed between the sample and the x-ray generator, the focusing optics being configured to focus the pulsed x-ray beam into a spot on the sample. ## Claims ### Claim 1 A system comprising: an integrated circuit comprising a silicon layer with a metallization layer positioned over the silicon layer and wherein the metallization layer is thinner than the silicon layer; an x-ray generator configured to generate a pulsed x-ray beam, wherein the pulsed x-ray beam is at least about 1 keV and of sufficient energy to propagate through the silicon layer and the to metallization layer, wherein each pulse of said pulsed x-ray beam has a pulse width of at most about 1 nanosecond; and focusing optics disposed between said sample and said x ray generator said pulsed x-ray beam, said focusing optics being configured to focus said pulsed x-ray beam into a spot on the integrated circuit. ### Claim 2 (depends on 1) The system of claim 1 wherein said x-ray generator includes a pulsed micro-focused x-ray tube. ### Claim 3 (depends on 1) The system of claim 1 wherein said x-ray generator includes a pulsed nano-focused x-ray tube. ### Claim 4 (depends on 1) The system of claim 1 wherein said x-ray generator includes an inverse Compton scattering x-ray generator. ### Claim 5 (depends on 1) The system of claim 1 wherein each pulse of said pulsed x-ray beam has a pulse width in a range of about 10 picoseconds to about 100 picoseconds. ### Claim 6 (depends on 1) The system of claim 1 wherein said pulsed x-ray beam has an energy of at least 1 keV. ### Claim 7 (depends on 1) The system of claim 1 wherein said focused x-ray spot on the sample has a maximum width of at most about 1 micron. ### Claim 8 (depends on 1) The system of claim 1 further comprising a collimator disposed between said focusing optics and said sample, said collimator defining an aperture therein. ### Claim 9 (depends on 8) The system of claim 8 wherein said aperture has a diameter of at most about 1 micron. ### Claim 10 (depends on 1) The system of claim 1 wherein said sample is mounted on a motion control table. ### Claim 11 (depends on 1) The system of claim 1 further comprising a pulsed source driver configured to supply power to said x-ray generator. ### Claim 12 (depends on 11) The system of claim 11 further comprising a controller in communication with said pulsed source driver. ### Claim 13 A system for determining ionization susceptibility comprising: an articulateable surface; an integrated circuit comprising a silicon layer with a metallization layer positioned over the silicon layer and wherein the metallization layer is thinner than the silicon layer, wherein the integrated circuit is mounted on said articulateable surface; an x-ray generator configured to generate a pulsed x-ray beam, of at least about 1 keV and of sufficient energy to propagate through the silicon layer and the to metallization layer, wherein each pulse of said pulsed x-ray beam has a pulse width of at most about 1 nanosecond; focusing optics disposed between said integrated circuit and said pulsed x-ray beam and configured to focus said pulsed x-ray beam into a spot on the integrated circuit; and a collimator disposed between said focusing optics and the integrated circuit, said collimator defining an aperture therein, wherein said aperture is aligned with said spot and has a diameter of at most about 1 micron. ### Claim 14 A method for determining ionization susceptibility of an integrated circuit comprising a silicon layer with a metallization layer positioned over the silicon layer and wherein the metallization layer is thinner than the silicon layer comprising the steps of; generating a pulsed x-ray beam of at least about 1 keV and of sufficient energy to propagate through the silicon layer and the to metallization layer, wherein each pulse of said pulsed x-ray beam has a pulse width of at most about 1 nanosecond; focusing said pulsed x-ray beam into a spot on the integrated circuit; and observing a response of the integrated circuit to said focused, pulsed x-ray beam. ### Claim 15 (depends on 14) The method of claim 14 wherein said step of generating said pulsed x-ray beam includes the use of at least one of a micro-focused x-ray tube, a nano-focused x-ray tube, and an inverse Compton scattering x-ray generator. ### Claim 16 (depends on 14) The method of claim 14 wherein said spot has a maximum width of at most about 1 micron. ### Claim 17 (depends on 14) The method of claim 14 wherein said observing step includes communication between said active electronic device and a controller. ### Claim 18 (depends on 1) The system of claim 1 wherein the energy of the pulsed x-ray beam is from about 1 keV to about 100 keV. ### Claim 19 (depends on 1) The system of claim 1 wherein the energy of the pulsed x-ray beam is 10 keV. ### Claim 20 (depends on 1) The system of claim 1 wherein the energy of the pulsed x-ray beam is from about 10 keV to about 100 keV.