Nitride semiconductor laser chip
AssigneeSharp Kabushiki Kaisha
InventorsYoshinobu Kawaguchi, Takeshi Kamikawa
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Abstract
A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar. The coating film has, in a region contiguous with the resonator facet and in the vicinity thereof, a low-Ar region with a low Ar content and, on the side of this low-Ar region opposite from the resonator facet, a high-Ar region with a higher Ar content than the low-Ar region.
Claims14
A nitride semiconductor laser chip comprising:
- a nitride semiconductor layer formed on a substrate;
- a resonator facet formed on the nitride semiconductor layer;
- and
- a coating film formed on the resonator facet and containing a rare gas element,
- the coating film including a first region and a second region,
- the first region being in contact with the resonator facet and disposed between the resonator facet and the second region, and
- a percentage by number of atoms of the rare gas element in the first region being lower than a percentage by number of atoms of the rare gas element in the second region.
Dependencies are inferred from the claim text.