Back to results
US 8,571,081 B2Granted
Semiconductor light-emitting device
AssigneeRenesas Electronics Corporation
InventorIchiro Masumoto
Life of this patent
Estimating the term…
Abstract
A first cladding layer is formed above a substrate. An active layer is formed above the first cladding layer. An optical confinement layer is formed above the active layer. A pair of band-like current block layers is formed above the optical confinement layer and opposed to each other through an opening extending in a first direction. A second cladding layer is formed on the current block layers and the optical confinement layer. A contact layer is formed above the second cladding layer. A mesa portion is formed by being sandwiched between a pair of groove portions. The current block layers and the opening are included in the mesa portion, and an end of each current block layer on an opposite side to the opening and a side wall of the mesa portion are spaced apart by a predetermined value or more in a second direction.
Claims20
A semiconductor light-emitting device comprising:
- a first cladding layer formed above a substrate of a first conductivity type;
- an active layer formed above the first cladding layer;
- an optical confinement layer formed above the active layer and having a second conductivity type different from the first conductivity type;
- a pair of band-like current block layers formed above the optical confinement layer, the current block layers being opposed to each other through an opening extending in a first direction;
- a second cladding layer of the second conductivity type formed on the current block layers and the optical confinement layer exposed with the current block layers not formed;
- a contact layer of the second conductivity type formed above the second cladding layer;
- a mesa portion sandwiched between a pair of groove portions penetrating at least the active layer from the contact layer and extending in the first direction, and the current block layers and the opening are included in the mesa portion, the mesa portion having a value X corresponding to a width of each current block layer extending in a second direction orthogonal to the first direction at an upper surface of the optical confinement layer, the mesa portion also having a value Y corresponding to a distance from an end of each current block layer on an opposite side to the opening to a side wall of the mesa portion defined by a side wall of the optical confinement layer in the second direction orthogonal to the first direction at an upper surface of the optical confinement layer, and Y is greater than 5 μm.
4 more elements
A semiconductor light-emitting device comprising:
- a first cladding layer formed above a substrate of a first conductivity type;
- an active layer formed above the first cladding layer;
- an optical confinement layer formed above the active layer and having a second conductivity type different from the first conductivity type;
- a pair of band-like current block layers formed above the optical confinement layer, the current block layers being opposed to each other through an opening extending in a first direction;
- a second cladding layer of the second conductivity type formed on the current block layers and the optical confinement layer exposed with the current block layers not formed;
- a contact layer of the second conductivity type formed above the second cladding layer;
- a mesa portion sandwiched between a pair of groove portions penetrating at least the active layer from the contact layer and extending in the first direction, and the current block layers and the opening are included in the mesa portion;
- and
- an end of each current block layer on an opposite side to the opening to a side wall of the mesa portion defined by a side wall of the optical confinement layer is spaced apart by a predetermined value of 10 μm and greater in a second direction orthogonal to the first direction at an upper surface of the optical confinement layer.
6 more elements
A semiconductor light-emitting device comprising:
- a first cladding layer formed above a substrate of a first conductivity type;
- an active layer formed above the first cladding layer;
- an optical confinement layer formed above the active layer and having a second conductivity type different from the first conductivity type;
- a pair of band-like current block layers formed above the optical confinement layer, the current block layers being opposed to each other through an opening extending in a first direction;
- a second cladding layer of the second conductivity type formed on the current block layers and the optical confinement layer exposed with the current block layers not formed;
- a contact layer of the second conductivity type formed above the second cladding layer;
- a mesa portion sandwiched between a pair of groove portions penetrating at least the active layer from the contact layer and extending in the first direction, a bottom portion of each of the groove portions being positioned within the first cladding layer, and the current block layers and the opening are included in the mesa portion, the mesa portion having a value X corresponding to a width of each current block layer extending in a second direction orthogonal to the first direction at an upper surface of the optical confinement layer, the mesa portion also having a predetermined value Y corresponding to a distance from an end of each current block layer on an opposite side to the opening to a side wall of the mesa portion defined by a side wall of the optical confinement layer in the second direction, and Y is greater than 5 μm.
4 more elements
Dependencies are inferred from the claim text.