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US 8,570,825 B2Granted
Temperature sensor, method of manufacturing the temperature sensor, semiconductor device, method of manufacturing the semiconductor device, and method of controlling the semiconductor device
AssigneeTokyo Electron Limited
InventorYoshitsugu Tanaka
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Abstract
A disclosed temperature sensor includes a charge trap structure including a silicon oxide film formed on a substrate; an aluminum oxide film that is formed on the silicon oxide film, wherein oxygen is injected into the aluminum oxide film from an upper surface thereof; and an electrode formed on the aluminum oxide film, wherein a flat band voltage of the charge trap structure is temperature dependent.
Claims19
A temperature sensor comprising:
- a charge trap structure including
- a silicon oxide film formed on a substrate;
- an aluminum oxide film that is formed on the silicon oxide film, wherein oxygen is injected into the aluminum oxide film from an upper surface thereof;
- and
- an electrode formed on the aluminum oxide film,
- wherein a flat band voltage of the charge trap structure is temperature dependent.
3 more elements
A method of manufacturing a temperature sensor comprising steps of:
- forming a silicon oxide film on a substrate;
- forming an aluminum oxide film on the silicon oxide film;
- injecting oxygen into the aluminum oxide film from an upper surface thereof;
- and
- forming an electrode on the aluminum oxide film to which the oxygen has been injected.
2 more elements
Dependencies are inferred from the claim text.