# US 8,570,780 B2 · Semiconductor device

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- Number: US 8,570,780 B2
- Document ID: US8570780B2
- Status: Granted
- Kind: B2
- Application number: 13/396,934
- Filed: 2012-02-15
- Published: 2012-12-06
- Granted: 2013-10-29
- Earliest claimed: 2011-06-03
- Assignees: Mitsubishi Electric Corporation
- Applicants: Shinsuke Godo; Atsunobu Kawamoto
- Inventors: Shinsuke Godo; Atsunobu Kawamoto
- Web page: https://patentgrep.com/patent/US8570780B2

## CPC

- H10D 12/441: {Vertical IGBTs}
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 88/00: Three-dimensional [3D] integrated devices
- H10W 90/811: {Multiple chips on leadframes}
- H02M 1/344: {Active dissipative snubbers}
- H10W 72/5438: {the bond wires having multiple connections on the same bond pad}
- H10W 72/5475: {multiple bond wires connected to common bond pads at both ends of the wires}
- H10W 72/5524: {comprising aluminium [Al]}
- H10W 72/926: {Multiple bond pads having different sizes}
- H10W 72/932: {Plan-view shape, i.e. in top view}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/732: {between stacked chips}
- H10W 90/753: {between laterally-adjacent chips}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)

## Abstract

A semiconductor device includes: a parallel connection structure 1 between a first node and a second node; a first snubber device and a second snubber device having a clamp level that is the same as or higher than the output voltage of a power source section. One terminal of the first snubber device is connected through the first node to one end of the parallel connection structure, the opposite terminal of the first snubber device is connected through a third node to one terminal of the second snubber device, and the opposite terminal of the second snubber device is connected through the second node to the opposite end of the parallel connection structure. Electric power is fed back to the power source section through the second and third nodes.

## Claims

### Claim 1

A semiconductor device, comprising:
a parallel connection structure in which a main switching element and a first diode are connected in parallel between a first node and a second node;
a first snubber device having a clamp level that does not exceed the breakdown voltage of said main switching element; and
a second snubber device having a clamp level that is the same as or higher than the output voltage of a power source section for supplying electric power to a drive circuit for driving said main switching element, wherein
one terminal of said first snubber device is connected through said first node to one end of said parallel connection structure, the opposite terminal of said first snubber device is connected through a third node to one terminal of said second snubber device, and the opposite terminal of said second snubber device is connected through said second node to the opposite end of said parallel connection structure, and
electric power is fed back to said power source section through said second and third nodes.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising a second diode provided between said third node and said power source section, the forward direction of the second diode corresponding to a direction from said third node toward said power source section.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein
said first snubber device includes:
a MOSFET made of a wide band gap material, the MOSFET having a drain terminal at said one terminal of said first snubber device, and a source terminal at said opposite terminal of said first snubber device;
a Zener diode formed between said drain terminal and a gate terminal of said MOSFET; and
a first resistor formed between said source and gate terminals of said MOSFET,
said second snubber device includes an IGBT having a collector terminal corresponding to said one terminal of said second snubber device, and an emitter terminal corresponding to said opposite terminal of said second snubber device, and
the forward direction of said first diode corresponds to a direction from said second node toward said first node.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, further comprising
a second diode provided between said third node and said power source section, the forward direction of the second diode corresponding to a direction from said third node toward said power source section, wherein
said second diode is a diode parasitic to said IGBT.

### Claim 5 (depends on 3)

The semiconductor device according to claim 3, further comprising
a second diode provided between said third node and said power source section, the forward direction of the second diode corresponding to a direction from said third node toward said power source section, and
a second resistor provided between said second diode and said power source section.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5, further comprising
a CMOS circuit for monitoring the temperatures of said MOSFET and said IGBT, and generating a control signal for controlling said main switching element based on a result of the monitoring, wherein
said CMOS circuit is provided between said second diode and said second node, and
part of said electric power to be fed back to said power source section is supplied to said CMOS circuit.

### Claim 7 (depends on 6)

The semiconductor device according to claim 6, wherein said second resistor is provided between said second diode and said CMOS circuit.

### Claim 8 (depends on 6)

The semiconductor device according to claim 6, wherein said CMOS circuit generates a signal based on a current flowing in a current detecting terminal of said main switching element.

### Claim 9 (depends on 6)

The semiconductor device according to claim 6, further comprising
a temperature detecting element for detecting the temperature of said main switching element, wherein
said CMOS circuit generates a signal based on a result of the detection made by said temperature detecting element.

### Claim 10 (depends on 6)

The semiconductor device according to claim 6, wherein said CMOS circuit monitors a signal at a gate terminal of said IGBT, and generates a control signal for controlling said main switching element based on a result of the monitoring.

### Claim 11 (depends on 6)

The semiconductor device according to claim 6, wherein said CMOS circuit monitors a signal at a current detecting terminal of said IGBT, and generates a control signal for controlling said main switching element based on a result of the monitoring.

### Claim 12 (depends on 6)

The semiconductor device according to claim 6, comprising any one of an NMOS circuit, a bipolar circuit, and a BiCMOS circuit in place of said CMOS circuit.

### Claim 13 (depends on 1)

The semiconductor device according to claim 1, comprising an inverter bridge in place of said parallel connection structure.

### Claim 14 (depends on 3)

The semiconductor device according to claim 3, wherein said MOSFET, said Zener diode, and said first resistor are individual members independent of one another.

### Claim 15

A semiconductor device, comprising a semiconductor unit and a power source section, wherein
said semiconductor unit includes:
a parallel connection structure in which a main switching element and a first diode are connected in parallel between a first node and a second node;
a first snubber device having a clamp level that does not exceed the breakdown voltage of said main switching element; and
a second snubber device having a clamp level that is the same as or higher than the output voltage of said power source section for supplying electric power to a drive circuit for driving said main switching element,
one terminal of said first snubber device is connected through said first node to one end of said parallel connection structure, the opposite terminal of said first snubber device is connected through a third node to one terminal of said second snubber device, and the opposite terminal of said second snubber device is connected through said second node to the opposite end of said parallel connection structure, and
electric power is fed back to said power source section through said second and third nodes.

### Claim 16 (depends on 15)

The semiconductor device according to claim 15, comprising a bi-directional converter capable of supplying electric power to be fed back from said semiconductor unit to a circuit other than said drive circuit.