Method of fabricating an integrated device
AssigneeSilicon Light Machines Corporation
InventorsJoshua Lu, Gregory Beach, Alexander P. Payne, James Hunter
Life of this patent
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Abstract
A method of fabricating an integrated device including a MicroElectroMechanical system (MEMS) and an associated microcircuit is provided. In one embodiment, the method comprises: forming a high temperature contact through a dielectric layer to an underlying element of a microcircuit formed adjacent to a MicroElectroMechanical System (MEMS) structure on a substrate; and depositing a layer of conducting material over the dielectric layer, and patterning the layer of conducting material to form a local interconnect (LI) for the microcircuit overlying and electrically coupled to the contact and a bottom electrode for the adjacent MEMS structure. Other embodiments are also provided.
Claims19
A method of fabricating an integrated device comprising:
- forming a contact opening through a dielectric layer to an underlying structure of a microcircuit on a substrate;
- depositing a multi-layer seed layer comprising a refractory metal on a surface of the contact opening, wherein depositing the seed layer comprises depositing a layer of titanium (Ti), and further depositing a layer of titanium-tungsten (TiW) on the Ti layer;
- nitriding the TiW layer of the multi-layer seed layer to form a barrier layer on a surface thereof;
- and
- depositing a metal over the barrier layer to form a high temperature contact in the opening;
- forming a temperature resistant cap over the high temperature contact.
A method of fabricating an integrated device comprising:
- forming a contact opening through a dielectric layer to an underlying element of a microcircuit formed adjacent to a MicroElectroMechanical System (MEMS) structure on a substrate;
- depositing a multi-layer seed layer comprising a refractory metal on a surface of the contact opening, wherein depositing the multi-layer seed layer comprises depositing a layer of titanium (Ti), and further depositing a layer of titanium-tungsten (TiW) on the Ti layer;
- nitriding the TiW layer of the multi-layer seed layer to form a barrier layer on a surface thereof;
- depositing a metal over the barrier layer to form a high temperature contact in the opening;
- and
- depositing a layer of conducting material over the dielectric layer, and patterning the layer of conducting material to form a local interconnect (LI) for the microcircuit overlying and electrically coupled to the high temperature contact and a bottom electrode for the adjacent MEMS structure.
An integrated device comprising a diffractive light modulator adjacent to a microcircuit on a single substrate, the microcircuit including a plurality of transistors formed in the substrate, a local interconnect (LI) layer through which the plurality of transistors are electrically coupled to the diffractive light modulator, and a high temperature contact through a dielectric layer to electrically couple the LI layer to at least one of the underlying plurality of transistors, and wherein the high temperature contact comprises a multi-layer seed layer including a titanium (Ti) layer in contact with at least one of the underlying plurality of transistors formed in the substrate and a titanium-tungsten (TiW) layer on the Ti layer, and a barrier layer comprising a nitrided portion of the TiW layer, a metal deposited over the barrier layer and a temperature resistant cap.
Dependencies are inferred from the claim text.