Liquid crystal display device and method of fabricating the same

A method of fabricating a liquid crystal display having a display area and a non-display area, the method comprising:

• forming a thin film transistor, a pixel electrode electrically connected with the thin film transistor, and a light sensor on a first substrate;
• providing a second substrate on which a color filter and a black matrix are formed;
• assembling a backlight, the first and second substrates, a support frame, and a top case to fabricate the LCD device, wherein brightness of the backlight is controlled by the light sensor;
• forming a liquid crystal layer between the first substrate and the second substrate;
• and
• forming a seal pattern on the outermost peripheral edge of the display area to securely attach the first substrate and the second substrate,
• wherein the liquid crystal layer is disposed inside the seal pattern and is not disposed over the light sensor,
• wherein the light sensor is formed on the first substrate in the non-display area to sense an intensity of an external light,
• wherein the light sensor includes a gate electrode formed on the first substrate, a gate insulating layer formed on the gate electrode, a semiconductor layer formed on and directly in contact with the gate insulation layer, source and drain electrodes formed on and directly in contact with the semiconductor layer and a passivation layer formed on the source and drain electrodes,
• wherein the light sensor is positioned outside the seal pattern, adjacent the black matrix, and exposed to an outside,
• wherein the drain electrode of the light sensor is connected with a light sensor pad and the light sensor pad is connected with a backlight driver to output a signal for controlling the brightness of the backlight,
• wherein the light sensor pad is formed of the same conductive material as the gate electrode or the source and drain electrodes and is formed of the same process as the gate electrode or the source and drain electrodes,
• wherein the second semiconductor layer comprises:
• an active layer of amorphous silicon, and
• an ohmic contact layer of impurity-doped amorphous silicon,
• wherein the light sensor is formed between the first substrate and the second substrate, and
• wherein the black matrix is formed on portions of the second substrate corresponding to both the non-display area and the display area.

A method of fabricating a liquid crystal display device, the method comprising:

• defining a display area and a non-display area on a first substrate and a second substrate;
• forming a light sensor on the first substrate in the non-display area, the light sensor outputting a signal based on an intensity of light;
• forming a seal pattern on the first substrate or the second substrate in the non-display area;
• and
• attaching the first substrate and the second substrate using the seal pattern and forming a liquid crystal layer between the first and second substrates in the display area,
• wherein the seal pattern is formed on the outermost peripheral edge of the display area to securely attach the first substrate and the second substrate,
• wherein the liquid crystal layer is disposed inside the seal pattern and is not disposed over the light sensor,
• wherein the light sensor includes a gate electrode formed on the first substrate, a gate insulating layer formed on the gate electrode, a semiconductor layer formed on and directly in contact with the gate insulation layer, source and drain electrodes formed on and directly in contact with the semiconductor layer and a passivation layer formed on the source and drain electrodes,
• wherein the light sensor is positioned outside the seal pattern, adjacent the black matrix, and exposed to an outside,
• wherein the drain electrode of the light sensor is connected with a light sensor pad and the light sensor pad is connected with a backlight driver to output a signal for controlling the brightness of the backlight,
• wherein the light sensor pad is formed of the same conductive material as the gate electrode or the source and drain electrodes and is formed of the same process as the gate electrode or the source and drain electrodes, and
• wherein the second semiconductor layer comprises:
• an active layer of amorphous silicon, and
• an ohmic contact layer of impurity-doped amorphous silicon,
• wherein the light sensor is formed between the first substrate and the second substrate, and
• wherein the black matrix is formed on portions of the second substrate corresponding to both the non-display area and the display area.