# US 8,570,455 B2 · Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus

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- Number: US 8,570,455 B2
- Document ID: US8570455B2
- Status: Granted
- Kind: B2
- Application number: 12/934,659
- Filed: 2009-03-30
- Published: 2011-01-20
- Granted: 2013-10-29
- Earliest claimed: 2008-04-02
- Assignees: NLT Technologies, Ltd.
- Applicants: Shigeru Mori; Isao Shouji; Hiroshi Tanabe
- Inventors: Shigeru Mori; Isao Shouji; Hiroshi Tanabe
- Web page: https://patentgrep.com/patent/US8570455B2

## CPC

- H10D 30/6715: {characterised by the doping profiles, e.g. having lightly-doped source or drain extensions}
- G02F 1/13685: {Top gates}
- H10P 30/204: {into Group IV semiconductors}
- H10P 30/208: {of electrically inactive species}
- H10P 30/21: {of electrically active species}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a supporting substrate; a semiconductor film on the supporting substrate; a gate insulating film on the semiconductor film; a gate electrode on the gate insulating film; and a source region and a drain region formed by introducing impurity elements to the semiconductor film. The thickness of the semiconductor film is within the range of 20 nm to 40 nm. Low-concentration regions are provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively. The low-concentration regions each have an impurity concentration smaller than that of the source region and that of the drain region, and the impurity concentration in a lower surface side region on the side of the supporting substrate is smaller than that of an upper surface side region on the opposite side.

## Claims

### Claim 1

A semiconductor device comprising:
a supporting substrate;
a semiconductor film on the supporting substrate;
a gate insulating film on the semiconductor film;
a gate electrode on the gate insulating film; and
a source region and a drain region formed by introducing boron to the semiconductor film,
wherein a thickness of the semiconductor film is within a range of 20 nm to 40 nm,
the semiconductor device further comprises low-concentration regions provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively, the low-concentration regions each having a boron concentration smaller than that of the source region and that of the drain region, and the boron concentration in a lower surface side region on a side of the supporting substrate being smaller than that of an upper surface side region on the opposite side, and
the semiconductor film is configured such that the integral of product A×B over the total wavelength range (nm) is not more than 5, where A is a relative intensity spectrum obtained by normalizing a luminescence spectrum of incident light upon the semiconductor film, by the maximum value of the luminescence spectrum, B is a relative intensity spectrum obtained by normalizing an absorption spectrum of the semiconductor film by the maximum value of the absorption spectrum, and the incident light has a wavelength range of 400 nm to 800 nm.

### Claim 2

A liquid crystal display device, comprising:
a liquid crystal panel comprising a semiconductor device; and
a light source illuminating the liquid crystal panel,
wherein the semiconductor device comprises:
a supporting substrate;
a semiconductor film on the supporting substrate;
a gate insulating film on the semiconductor film;
a gate electrode on the gate insulating film; and
a source region and a drain region formed by introducing boron to the semiconductor film; and
the semiconductor film is configured such that the integral of product A×B over the total wavelength range (nm) is not more than 5, where A is a relative intensity spectrum obtained by normalizing a luminescence spectrum of incident light upon the semiconductor film from the supporting substrate side for illuminating the liquid crystal panel, by the maximum value of the luminescence spectrum, B is a relative intensity spectrum obtained by normalizing an absorption spectrum of the semiconductor film by the maximum value of the absorption spectrum, and a wavelength of the incident light has a range of 400 nm to 800 nm.

### Claim 3 (depends on 2)

An electronic apparatus comprising the liquid crystal display device according to claim 2.

### Claim 4

A semiconductor device comprising:
a supporting substrate;
a semiconductor film on the supporting substrate;
a gate insulating film on the semiconductor film;
a gate electrode on the gate insulating film; and
a source region and a drain region formed by introducing boron to the semiconductor film,
wherein a thickness of the semiconductor film is within a range of 20 nm to 40 nm,
the semiconductor device further comprises low-concentration regions provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively, the low-concentration regions each having a boron concentration smaller than that of the source region and that of the drain region, and the boron concentration in a lower surface side region on a side of the supporting substrate being smaller than that of an upper surface side region on the opposite side, a sheet resistance of each of the low-concentration region has a range of 3×105 Ω/□ to 2×107 Ω/□, and
the source region and the drain region each comprise a region having a boron concentration in a range of 3.1×1018 cm−to 3.4×1020 cm−along a thickness direction from the lower surface of the semiconductor film on the side of the supporting substrate.

### Claim 5

A semiconductor device comprising:
a supporting substrate;
a semiconductor film on the supporting substrate;
a gate insulating film on the semiconductor film;
a gate electrode on the gate insulating film; and
a source region and a drain region formed by introducing boron to the semiconductor film,
wherein a thickness of the semiconductor film is within a range of 20 nm to 40 nm,
the semiconductor device further comprises low-concentration regions provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively, the low-concentration regions each having a boron concentration smaller than that of the source region and that of the drain region, and the boron concentration in a lower surface side region on a side of the supporting substrate being smaller than that of an upper surface side region on the opposite side,
a sheet resistance of each of the low-concentration region has a range of 3×105Ω/□ to 1×106 Ω/□, and
the source region and the drain region each comprise a region having a boron concentration in a range of 3.1×1018 cm−3 to 3.4×1020 cm−3 along a thickness direction from the lower surface of the semiconductor film on the side of the supporting substrate.

### Claim 6

A semiconductor device comprising:
a supporting substrate;
a semiconductor film on the supporting substrate;
a gate insulating film on the semiconductor film;
a gate electrode on the gate insulating film; and
a source region and a drain region formed by introducing boron to the semiconductor film,
wherein a thickness of the semiconductor film is within a range of 20 nm to 40 nm,
the semiconductor device further comprises low-concentration regions provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively, the low-concentration regions each having a boron concentration smaller than that of the source region and that of the drain region, and the boron concentration in a lower surface side region on a side of the supporting substrate being smaller than that of an upper surface side region on the opposite side,
a sheet resistance of each of the low-concentration region has a range of 3×105 Ω/□ to 2×107 Ω/□, and
the semiconductor film is configured such that the integral of product A×B over the total wavelength range (nm) is not more than 5, where A is a relative intensity spectrum obtained by normalizing a luminescence spectrum of incident light upon the semiconductor film, by the maximum value of the luminescence spectrum, B is a relative intensity spectrum obtained by normalizing an absorption spectrum of the semiconductor film by the maximum value of the absorption spectrum, and the incident light has a wavelength range of 400 nm to 800 nm.

### Claim 7

A semiconductor device comprising:
a supporting substrate;
a semiconductor film on the supporting substrate;
a gate insulating film on the semiconductor film;
a gate electrode on the gate insulating film; and
a source region and a drain region formed by introducing boron to the semiconductor film,
wherein a thickness of the semiconductor film is within a range of 20 nm to 40 nm,
the semiconductor device further comprises low-concentration regions provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively, the low-concentration regions each having a boron concentration smaller than that of the source region and that of the drain region, and the boron concentration in a lower surface side region on a side of the supporting substrate being smaller than that of an upper surface side region on the opposite side,
a sheet resistance of each of the low-concentration region has a range of 3×105 Ω/□ to 1×106 Ω/□, and the semiconductor film is configured such that the integral of product A×B over the total wavelength range (nm) is not more than 5, where A is a relative intensity spectrum obtained by normalizing a luminescence spectrum of incident light upon the semiconductor film, by the maximum value of the luminescence spectrum, B is a relative intensity spectrum obtained by normalizing an absorption spectrum of the semiconductor film by the maximum value of the absorption spectrum, and the incident light has a wavelength range of 400 nm to 800 nm.

### Claim 8

A semiconductor device comprising:
a supporting substrate;
a semiconductor film on the supporting substrate;
a gate insulating film on the semiconductor film;
a gate electrode on the gate insulating film; and
a source region and a drain region formed by introducing boron to the semiconductor film,
wherein a thickness of the semiconductor film is within a range of 20 nm to 40 nm,
the semiconductor device further comprises low-concentration regions provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively, the low-concentration regions each having a boron concentration smaller than that of the source region and that of the drain region, and the boron concentration in a lower surface side region on a side of the supporting substrate being smaller than that of an upper surface side region on the opposite side,
the source region and the drain region each comprise a region having a boron concentration in a range of 3.1×1018 cm−3 to 3.4×1020 cm−3 along a thickness direction from the lower surface of the semiconductor film on the side of the supporting substrate, and
the semiconductor film is configured such that the integral of product A×B over the total wavelength range (nm) is not more than 5, where A is a relative intensity spectrum obtained by normalizing a luminescence spectrum of incident light upon the semiconductor film, by the maximum value of the luminescence spectrum, B is a relative intensity spectrum obtained by normalizing an absorption spectrum of the semiconductor film by the maximum value of the absorption spectrum, and the incident light has a wavelength range of 400 nm to 800 nm.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein the integral is obtained in accordance with Equation 1:
The integral of spectrum=∫λminλmaxA(λ)×B(λ)dλ Equation 1.

### Claim 10 (depends on 2)

The liquid crystal display device according to claim 2, wherein the integral is obtained in accordance with Equation 1:
The integral of spectrum=∫λminλmaxA(λ)×B(λ)dλ Equation 1.

### Claim 11 (depends on 6)

The semiconductor device according to claim 6, wherein the integral is obtained in accordance with Equation 1:
The integral of spectrum=∫λminλmaxA(λ)×B(λ)dλ Equation 1.

### Claim 12 (depends on 7)

The semiconductor device according to claim 7, wherein the integral is obtained in accordance with Equation 1:
The integral of spectrum=∫λminλmaxA(λ)×B(λ)dλ Equation 1.