# US 8,570,409 B2 · Image sensors and methods of manufacturing image sensors

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- Number: US 8,570,409 B2
- Document ID: US8570409B2
- Status: Granted
- Kind: B2
- Application number: 12/909,948
- Filed: 2010-10-22
- Published: 2011-04-28
- Granted: 2013-10-29
- Earliest claimed: 2009-10-22
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Sang-Jun Choi; Yoon-Dong Park; Chris Hong; Dae-Lok Bae; Jung-Chak Ahn; Chang-Rok Moon; June-Mo Koo; Suk-Pil Kim; Hoon-Sang Oh
- Inventors: Sang-Jun Choi; Yoon-Dong Park; Chris Hong; Dae-Lok Bae; Jung-Chak Ahn; Chang-Rok Moon; June-Mo Koo; Suk-Pil Kim; Hoon-Sang Oh
- Web page: https://patentgrep.com/patent/US8570409B2

## CPC

- H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels}
- H10W 20/023: {the interconnections being through-semiconductor vias}
- H10F 39/026: {Wafer-level processing}
- H10F 39/8037: {the integrated elements comprising a transistor}
- H10F 39/809: {of hybrid image sensors}
- H10F 39/811: {Interconnections}
- H10W 20/0234: {comprising etching via holes that stop on pads or on electrodes}
- H10W 20/0238: {comprising etching via holes through pads or through electrodes}
- H10W 20/0242: {comprising etching via holes from the back sides of the chips, wafers or substrates}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/2134: {TSVs extending from the semiconductor wafer into back-end-of-line layers}
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

## Claims

### Claim 1

An image sensor comprising:
a first substrate including a driving element;
a first insulation layer on the first substrate and on the driving element;
a second substrate including a photoelectric conversion element;
a second insulation layer on the second substrate and on the photoelectric conversion element, wherein a surface of the second insulation layer is on an upper surface of the first insulation layer;
a conductive connector penetrating the second substrate, the second insulation layer and a portion of the first insulation layer, wherein the conductive connector comprises a single plug;
a first wiring pattern between the first substrate and the first insulation layer;
a second wiring pattern between the second substrate and the second insulation layer; and
a floating diffusion region in the second substrate;
wherein the second wiring pattern is electrically connected to the floating diffusion region, and wherein the first wiring pattern is electrically connected to the second wiring pattern by the conductive connector, wherein each of the first and second wiring patterns are in direct contact with the conductive connector.

### Claim 2 (depends on 1)

The image sensor of claim 1, wherein the photoelectric conversion element comprises a photodiode, a transfer transistor and a floating diffusion region, wherein the floating diffusion region is electrically connected to a gate of a driving transistor by the conductive connector.

### Claim 3 (depends on 2)

The image sensor of claim 2, wherein the floating diffusion region is electrically connected to a reset transistor by the conductive connector.

### Claim 4 (depends on 2)

The image sensor of claim 2, wherein the photodiode comprises a first photodiode, wherein the transfer transistor comprises a first transfer transistor, wherein the photoelectric conversion element further comprises a second photodiode and a second transfer transistor, and wherein the floating diffusion region is coupled to the first transfer transistor and the second transfer transistor.

### Claim 5 (depends on 2)

The image sensor of claim 2, wherein the first substrate comprises an active pixel region in which the driving transistor are disposed and a logic region in which transistors of logic circuits are disposed, wherein a first conductive connector is formed on the active pixel region to electrically connect the gate of the driving transistor to the floating diffusion region and a second conductive connector is formed on the logic region to electrically connect the transistors of the logic circuits to a gate of the transfer transistor, wherein each of the first and second conductive connectors comprises a respective single plug.

### Claim 6 (depends on 1)

The image sensor of claim 1, wherein the driving element comprises a reset transistor and a driving transistor.

### Claim 7 (depends on 6)

The image sensor of claim 6, wherein the driving element further comprises a selection transistor.

### Claim 8 (depends on 1)

The image sensor of claim 1, wherein the first wiring pattern has a rectangular shape extending in a direction parallel to the first substrate and each side of the rectangular shape is longer than about 1.2 μm.

### Claim 9 (depends on 1)

The image sensor of claim 1, wherein the second substrate has a thickness less than about 7000 Å.

### Claim 10 (depends on 1)

The image sensor of claim 1, wherein a third insulation layer is formed on a sidewall of upper portions of the conductive connector.