# US 8,570,062 B2 · EMI shielding circuit and semiconductor integrated circuit including the same

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- Number: US 8,570,062 B2
- Document ID: US8570062B2
- Status: Granted
- Kind: B2
- Application number: 13/340,885
- Filed: 2011-12-30
- Published: 2013-05-23
- Granted: 2013-10-29
- Earliest claimed: 2011-11-21
- Assignees: SK hynix Inc.
- Applicants: Jun Ho Lee
- Inventors: Jun Ho Lee
- Web page: https://patentgrep.com/patent/US8570062B2

## CPC

- H03K 19/00361: {in field effect transistor circuits}
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)

## Abstract

An electromagnetic interference (EMI) shielding circuit and a semiconductor integrated circuit including the same are provided. The EMI shielding circuit includes a data level comparison unit, a control signal generation unit, and a driver for EMI cancellation. The data level comparison unit generates a data comparison signal by comparing a number of high-level data transmitted through a plurality of data lines and a number of low-level data transmitted through the plurality of data lines. The control signal generation unit generates a driving control signal in response to the data comparison signal. The driver for EMI cancellation outputs an EMI cancellation signal in response to the driving control signal.

## Claims

### Claim 1

An electromagnetic interference (EMI) shielding circuit, comprising:
a data level comparison unit configured to generate a data comparison signal by comparing a number of high-level data transmitted through a plurality of data lines and a number of low-level data transmitted through the plurality of data lines;
a control signal generation unit configured to generate a driving control signal in response to the data comparison signal; and
a driver for EMI cancellation configured to output an EMI cancellation signal in response to the driving control signal.

### Claim 2 (depends on 1)

The EMI shielding circuit according to claim 1, wherein the data level comparison unit varies a voltage level of a detection node according to the number of high-level data transmitted through the plurality of data lines and the number of low-level data transmitted through the plurality of data lines, and the voltage level of the detection node is a voltage level of the data comparison signal.

### Claim 3 (depends on 2)

The EMI shielding circuit according to claim 2, wherein the data level comparison unit comprises:
a detection node pull-up unit configured to be connected to the plurality of data lines so as to pull up the voltage level of the detection node for each of the data transmitted through the plurality of data lines that has a low level; and
a detection node pull-down unit configured to be connected to the plurality of data lines so as to pull down the voltage level of the detection node for each of the data transmitted through the plurality of data lines that has a high level.

### Claim 4 (depends on 3)

The EMI shielding circuit according to claim 3, wherein the detection node pull-up unit comprises a plurality of transistors each having a gate to which a corresponding data line of the plurality of data lines is connected, a source to which an operation voltage is applied, and a drain to which the detection node is connected.

### Claim 5 (depends on 3)

The EMI shielding circuit according to claim 3, wherein the detection node pull-down node comprises a plurality of transistors each having a gate to which a corresponding data line of the plurality of data lines is connected, a source to which a ground terminal is connected, and a drain to which the detection node is connected.

### Claim 6 (depends on 2)

The EMI shielding circuit according to claim 2, wherein the control signal generation unit generates the driving control signal using the voltage level of the detection node.

### Claim 7

A semiconductor integrated circuit, comprising:
a data driving unit configured to drive data, wherein the data is transmitted to the data driving unit through a plurality of data lines; and
an EMI shielding circuit configured to compare the number of high-level data transmitted through the plurality of data lines and the number of low-level data transmitted through the plurality of data lines, and output an EMI cancellation signal having a level opposite to that of data having a larger number.

### Claim 8 (depends on 7)

The semiconductor integrated circuit according to claim 7, wherein the data driving unit comprises a plurality of data drivers for respectively driving the data transmitted through the plurality of data lines.

### Claim 9 (depends on 7)

The semiconductor integrated circuit according to claim 7, wherein the EMI shielding circuit comprises:
a data level comparison unit configured to compare the number of high-level data transmitted through the plurality of data lines and the number of low-level data transmitted through the plurality of data lines;
a control signal generation unit configured to drive a control output in response to the data level comparison unit output; and
a driver for EMI cancellation configured to output the EMI cancellation signal in response to the output of the control signal generation unit.

### Claim 10 (depends on 9)

The semiconductor integrated circuit according to claim 9, wherein the data level comparison unit comprises:
a detection node pull-up unit configured to pull up a voltage level of a detection node when the low-level data is inputted; and
a detection node pull-down unit configured to pull down the voltage level of the detection node when the high-level data is inputted.

### Claim 11 (depends on 10)

The semiconductor integrated circuit according to claim 10, wherein the control signal generation unit drives the control output in response to the voltage level of the detection node.

### Claim 12 (depends on 11)

The semiconductor integrated circuit according to claim 11, wherein the driver for EMI cancellation has impedance greater than the data driver.

### Claim 13 (depends on 12)

The semiconductor integrated circuit according to claim 12, wherein the impedance of the driver for EMI cancellation increases as the operating speed of the semiconductor integrated circuit increases.

### Claim 14

A method comprising:
generating a data comparison signal by comparing a number of high-level data transmitted through a plurality of data lines and a number of low-level data transmitted through the plurality of data lines;
generating a driving control signal in response to the data comparison signal; and
generating an EMI cancellation signal in response to the driving control signal.

### Claim 15 (depends on 14)

The method according to claim 14, wherein a voltage level of a detection node varies according to the number of high-level data transmitted through the plurality of data lines and the number of low-level data transmitted through the plurality of data lines, and the voltage level of the detection node is a voltage level of the data comparison signal.

### Claim 16 (depends on 15)

The method according to claim 15, wherein the voltage level of the detection node is pulled up in response to each of the low level data, and the voltage level of the detection node is pulled up in response to each of the low level data.
