# US 8,569,944 B2 · Light emitting device

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- Number: US 8,569,944 B2
- Document ID: US8569944B2
- Status: Granted
- Kind: B2
- Application number: 13/164,379
- Filed: 2011-06-20
- Published: 2011-10-13
- Granted: 2013-10-29
- Earliest claimed: 2006-12-26
- Assignees: Seoul Semiconductor Co., Ltd.
- Applicants: Hyuck Jung Choi; Kwang Il Park
- Inventors: Hyuck Jung Choi; Kwang Il Park
- Web page: https://patentgrep.com/patent/US8569944B2

## CPC

- H10H 20/8513: {having two or more wavelength conversion materials}
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed herein is a light emitting device. The light emitting device includes a light emitting diode disposed on a substrate to emit light of a first wavelength. A transparent molding part encloses the LED, a lower wavelength conversion material layer is disposed on the transparent molding part, and an upper wavelength conversion material layer is disposed on the lower wavelength conversion material layer. The lower wavelength conversion material layer contains a phosphor converting the light of the first wavelength into light of a second wavelength longer than the first wavelength, and the upper wavelength conversion material layer contains a phosphor converting the light of the first wavelength into light of a third wavelength, which is longer than the first wavelength but shorter than the second wavelength. Light produced via wavelength conversion is prevented from being lost by the phosphor. Light emitting devices including a multilayer reflection minor are also disclosed.

## Claims

### Claim 1

A light-emitting device, comprising;
a light-emitting diode arranged on a substrate, the light-emitting diode to emit light of a first wavelength;
a transparent molding part enclosing the light-emitting diode;
a first wavelength conversion material layer disposed on the transparent molding part and configured to convert the light of the first wavelength into light of a second wavelength, and comprising an opening;
a first light-transmitting member interposed between the light-emitting diode and the first wavelength conversion material layer; and
a second wavelength conversion material layer arranged on the first wavelength conversion material layer, the second wavelength conversion material layer to convert the light of the first wavelength into light of a third wavelength,
wherein the first light-transmitting member faces a surface of the light-emitting diode, and the first light-transmitting member is configured to transmit the light of the first wavelength and to reflect the light of the second wavelength, and
wherein the opening is filled with the second wavelength conversion material layer.

### Claim 2 (depends on 1)

The light-emitting device of claim 1, further comprising:
a second light-transmitting member interposed between the first wavelength conversion material layer and the second wavelength conversion material layer.

### Claim 3 (depends on 2)

The light-emitting device of claim 2, wherein the second light-transmitting member is spaced apart from the first light-transmitting member at a constant distance except at the opening in the first wavelength conversion material layer.

### Claim 4 (depends on 1)

The light-emitting device of claim 1, wherein the second wavelength and the third wavelength are longer than the first wavelength.

### Claim 5 (depends on 1)

The light-emitting device of claim 1, wherein the third wavelength is shorter than the second wavelength.

### Claim 6 (depends on 1)

The light-emitting device of claim 1, wherein at least one of the first wavelength conversion material layer and the second wavelength conversion material layer comprises epoxy containing a phosphor.

### Claim 7 (depends on 1)

The light-emitting device of claim 1, wherein the first light-transmitting member comprises a first surface and a second surface, the first surface facing an upper surface of the light-emitting diode and the second surface comprising a slope relative to a side surface of the light-emitting diode.

### Claim 8 (depends on 7)

The light-emitting device of claim 7, wherein the first surface is connected to the second surface, and an end of the second surface contacts the substrate.

### Claim 9 (depends on 7)

The light-emitting device of claim 7,
wherein the second light-transmitting member comprises a third surface and a fourth surface, the third surface facing the first surface and the fourth surface facing the second surface.

### Claim 10 (depends on 9)

The light-emitting device of claim 9, wherein the third surface is connected to the fourth surface and an end of the fourth surface contacts the substrate.

### Claim 11 (depends on 9)

The light-emitting device of claim 9, wherein an area of the third surface is wider than an area of the first surface.

### Claim 12 (depends on 7)

The light-emitting device of claim 7, wherein the slope is formed to be at a predetermined angle to the side surface of the light-emitting diode.

### Claim 13 (depends on 1)

The light-emitting device of claim 1, wherein the first wavelength conversion material layer and the first light-transmitting member comprise a trapezoidal cross-section.

### Claim 14 (depends on 1)

The light-emitting device of claim 1, wherein the second wavelength conversion material layer comprises a trapezoidal cross-section.

### Claim 15 (depends on 1)

The light-emitting device of claim 1, further comprising:
a first lead electrode and a second lead electrode disposed on the substrate and spaced apart from each other,
wherein the light-emitting diode is disposed on the first electrode.

### Claim 16 (depends on 15)

The light-emitting device of claim 15, wherein at least parts of the first wavelength conversion material layer and the second wavelength conversion material layer directly contact the first lead electrode and the second lead electrode.

### Claim 17 (depends on 16)

The light-emitting device of claim 16, wherein the first wavelength conversion material layer and the second wavelength conversion material layer each comprise a trapezoidal cross-section.
