Active area bonding compatible high current structures

A method of forming a semiconductor structure comprising:

• forming a top metal layer, wherein forming the top metal layer includes forming a sub-layer of the top of metal layer, the sub-layer being relatively stiff compared to the remaining portion of the top metal layer,
• forming a bond pad on a surface of the top metal layer;
• forming a conductor below the top metal layer;
• and
• forming an insulation layer separating the conductor from the top metal layer;
• wherein the sub-layer of relatively stiff material is configured to distribute stresses over the insulation layer to reduce cracking in the insulation layer.

A semiconductor structure comprising:

• at least one electrical device in a substrate;
• one or more intermediate metal layers between a top metal layer and the substrate;
• one or more insulation layers, the one or more insulation layers separating the one or more intermediate metal layers and the top metal layer;
• and
• a passivation layer over the top metal layer;
• the passivation layer patterned to form a bond pad on a surface of the top metal layer, wherein the at least one electrical device is located directly under the bond pad;
• and
• wherein one of the one or more insulation layers is located adjacent to the top metal layer and has a thickness selected to resist cracking due to stresses caused by at least one of a bond wire attachment process or temperature excursions.