Back to results
US 8,569,891 B1Granted
Forming array contacts in semiconductor memories
AssigneeMicron Technology, Inc.
InventorsRoberto Somaschini, Alessandro Vaccaro, Paolo Tessariol, Giulio Albini
Life of this patent
Estimating the term…
Abstract
Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.
Claims15
A method comprising:
- forming a semiconductor memory array;
- forming a dielectric layer over said array;
- forming parallel, spaced trenches through said layer;
- filling said trenches with a filler material;
- forming a plurality of masks extending generally perpendicularly to the length of said filled trenches;
- etching out the exposed portions of said filled trenches to form etched out portions;
- and
- filling said etched out portions with a metal.
5 more elements
A method comprising:
- forming a semiconductor memory array;
- covering said array with a dielectric material;
- forming a plurality of parallel spaced filled trenches in said dielectric material;
- forming a plurality of spaced openings along the length of each of said trenches;
- and
- filling said openings with a metal to form array contacts.
3 more elements
Dependencies are inferred from the claim text.