Methods and apparatus of under bump metallization in packaging semiconductor devices

A device comprising:

• a substrate having a surface, the surface having a first region configured to receive a connector element and a second region disjoint from the first region;
• a contact pad formed in the second region of the surface;
• a redistribution layer (RDL) within the second region electrically connected to the contact pad, wherein the RDL extends laterally from the contact pad, but does not extend into the first region;
• an under bump metallization (UBM) element extends from the first region to the second region, electrically connected to the RDL, wherein the UBM extends from the RDL and extends into the first region.

A package device, comprising:

• a conductive pad on a surface of a substrate, wherein the surface comprising a first region and a second region disjoint from the first region;
• a redistribution layer (RDL) above the first region of the surface of the substrate and electrically connected to the conductive pad;
• a passivation layer on the RDL layer, with a first opening to expose a portion of the RDL layer;
• and
• an under bump metallization (UBM) layer extending from the first region to the second region, over the second region of the surface of the substrate, over the passivation layer, and over the first opening to make contact with the exposed RDL layer;
• wherein the second region contains an area of projecting an outer periphery of a connector onto the surface.